NXP Semiconductors Product specification
Rectifier diodes BYW29EB, BYW29ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction - - 2.7 K/W
to mounting base
R
th j-a
Thermal resistance junction SOT404 and SOT428 packages, pcb - 50 - K/W
to ambient mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 8 A; T
j
= 150˚C - 0.8 0.895 V
I
F
= 8 A - 0.92 1.05 V
I
F
= 20 A - 1.1 1.3 V
I
R
Reverse current V
R
= V
RWM
-210µA
V
R
= V
RWM
; T
j
= 100˚C - 0.2 0.6 mA
Q
rr
Reverse recovered charge I
F
= 2 A; V
R
≥ 30 V; -dI
F
/dt = 20 A/µs-411nC
t
rr1
Reverse recovery time I
F
= 1 A; V
R
≥ 30 V; -dI
F
/dt = 100 A/µs2025ns
t
rr2
Reverse recovery time I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A - 15 20 ns
V
fr
Forward recovery voltage I
F
= 1 A; dI
F
/dt = 10 A/µs-1-V
November 1998 2 Rev 1.300