IR2175SPBF

Data Sheet No. PD60208 Rev. E
IR2175(S) & (PbF)
Block Diagram
Packages
Product Summary
V
OFFSET
600Vmax
I
QBS
2mA
V
in
+/-260mVmax
Gain temp.drift 20ppm/
o
C (typ.)
f
o
130kHz (typ.)
Overcurrent trip 2µsec (typ)
signal delay
Overcurrent trip level +/-260mV (typ.)
LINEAR CURRENT SENSING IC
8 Lead PDIP
IR2175
8 Lead SOIC
IR2175S
Features
Floating channel up to +600V
Monolithic integration
Linear current feedback through shunt resistor
Direct digital PWM output for easy interface
Low I
QBS
allows the boot strap power supply
Independent fast overcurrent trip signal
High common mode noise immunity
Input overvoltage protection for IGBT short circuit
condition
Open Drain outputs
Also available LEAD-FREE
Description
The IR2175 is a monolithic current sensing IC designed
for motor drive applications. It senses the motor phase
current through an external shunt resistor, converts from
analog to digital signal, and transfers the signal to the
low side. IR’s proprietary high voltage isolation tech-
nology is implemented to enable the high bandwidth
signal processing. The output format is discrete PWM
to eliminate need for the A/D input interface for the
IR2175. The dedicated overcurrent trip (OC) signal fa-
cilitates IGBT short circuit protection. The open-drain
outputs make easy for any interface from 3.3V to 15V. S
(Refer to Lead Assignments for cor-
rect pin configuration). This/These
diagram(s) show electrical connec-
tions only. Please refer to our Appli-
cation Notes and DesignTips for
proper circuit board layout.
VB
V+
VS
VCC
PO
COM
IR2175
GND
15V
To Motor Phase
PWM Output
Up to 600V
OCOvercurrent
2
IR2175
(S) & (PbF)
www.irf.com
Recommended Operating Conditions
The output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended
conditions.
Note 1: Capacitors are required between VB and Vs when bootstrap power is used. The external power supply,
when used, is required between VB and Vs pins.
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage V
S
+13.0 V
S
+20
V
S
High side floating supply offset voltage 0.3 600
V
PO
Digital PWM output voltage COM VCC
V
OC
Overcurrent output voltage COM VCC
V
CC
Low side and logic fixed supply voltage 9.5 20
V
IN
Input voltage between V
IN+
and V
S
-260 +260 mV
T
A
Ambient temperature -40 125
°C
V
Symbol Definition Min. Max. Units
V
S
High side offset voltage -0.3 600
V
BS
High side floating supply voltage
-0.3 25
V
CC
Low side and logic fixed supply voltage -0.3 25
V
IN
Maximum input voltage between V
IN+ and
V
S
-5 5
V
PO
Digital PWM output voltage COM -0.3 VCC +0.3
V
OC
Overcurrent output voltage COM -0.3 VCC +0.3
dV/dt Allowable offset voltage slew rate 50 V/ns
P
D
Package power dissipation @ T
A
+25°C 8 lead SOIC .625
8 lead PDIP 1.0
Rth
JA
Thermal resistance, junction to ambient 8 lead SOIC 200
8 lead PDIP 125
T
J
Junction temperature 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions.
V
°C/W
W
°C
3
IR2175
(S) & (PbF)
www.irf.com
Note 1: ±10mV offset represents ±1.5% duty cycle fluctuation
Note 2: Gain = (full range of duty cycle in %) / (full input voltage range).
V
IN
Nominal input voltage range before saturation -260 260
V
IN+
_
V
S
V
OC+
Overcurrent trip positive input voltage
260
V
OC-
Overcurrent trip negative input voltage -260
V
OS
Input offset voltage -10 0 10 V
IN
= 0V (Note 1)
V
OS
/
T
A
Input offset voltage temperature drift 25 µV/
o
C
G Gain (duty cycle % per V
IN
) 155 160 165 %/V max gain error=5%
(Note 2)
G
/
T
A
Gain temperature drift 20 ppm/
o
C
I
LK
Offset supply leakage current 50 µA V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 2 V
S
= 0V
I
QCC
Quiescent V
CC
supply current 0.5
LIN Linearity (duty cycle deviation from ideal linearity 0.5 1 %
curve)
V
LIN
/
T
A
Linearity temperature drift .005 %/
o
C
I
OPO
Digital PWM output sink current 20
2—
I
OCC
OC output sink current 10
1—
DC Electrical Characteristics
V
CC
= V
BS
= 15V, and T
A
= 25
o
unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
mA
mV
mA
V
O
= 1V
V
O
= 0.1V
V
O
= 1V
V
O
= 0.1V
Symbol Definition Min. Typ. Max. Units Test Conditions
Propagation delay characteristics
fo Carrier frequency output 100 130 180 kHz
f
/
T
A
Temperature drift of carrier frequency 500 ppm/
o
C
Dmin Minimum duty 9 %
Dmax Maximum duty 91 % V
IN
+=+260mV
BW fo bandwidth 15 kHz
PHS Phase shift at 1kHz -10
o
tdoc Propagation delay time of OC 1 2
twoc Low true pulse width of OC 1.5
AC Electrical Characteristics
V
CC
= V
BS
= 15V, and T
A
= 25
o
unless otherwise specified.
figure 1
V
IN
= 0 & 5V
V
IN
+=-260mV,
V
IN
+ = 100mVpk -pk
sine wave, gain=-3dB
V
IN
+ =100mVpk-pk
sine wave
µsec

IR2175SPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Motor / Motion / Ignition Controllers & Drivers LINEAR CURRENT 600V SENSING IC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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