DDTB142JC-7

DDTB (LO-R1) C
DS30403 Rev. 6 - 2
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DDTB (LO-R1) C
© Diodes Incorporated
PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Types Available (DDTD)
Built-In Biasing Resistors
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 3)
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking Information: See Table Below & Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
P/N R1 (NOM) R2 (NOM) Type Code
DDTB122LC
DDTB142JC
DDTB122TC
DDTB142TC
0.22KΩ
0.47KΩ
0.22KΩ
0.47KΩ
10KΩ
10KΩ
OPEN
OPEN
P75
P76
P77
P78
SOT-23
A
E
J
L
NEW P DUCRO T
Dim Min Max
A 0.37 0.51
B 1.20 1.40
C 2.30 2.50
D 0.89 1.03
E 0.45 0.60
G 1.78 2.05
H 2.80 3.00
J 0.013 0.10
K 0.903 1.10
L 0.45 0.61
M 0.085 0.180
α
0° 8°
All Dimensions in mm
BTOP VIEW
C
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage, (3) to (2)
V
CC
-50 V
Input Voltage, (1) to (2) DDTB122LC
DDTB142JC
V
IN
+5 to -6
+5 to -6
V
Input Voltage, (2) to (1) DDTB122TC
DDTB142TC
V
EBO (MAX)
-5 V
Output Current All
I
C
-500 mA
Power Dissipation (Note 2)
P
D
200 mW
Thermal Resistance, Junction to Ambient Air (Note 2)
R
θ
JA
625
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead. Halogen and Antimony Free.
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
2
O
3
Fire Retardants.
Schematic and Pin Diagram
R1
OUT
B
C
E
R2
3
21
IN
GND(+)
M
H
G
D
K
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DDTB (LO-R1) C
© Diodes Incorporated
Electrical Characteristics @T
A
= 25°C unless otherwise specified R1, R2 Types
Characteristic Symbol Min Typ Max Unit Test Condition
DDTB122LC
DDTB142JC
V
l(off)
-0.3
-0.3
V
V
CC
= -5V, I
O
= -100μA
Input Voltage
DDTB122LC
DDTB142JC
V
l(on)
-2.0
-2.0
V
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
Output Voltage
V
O(on)
-0.3V V
I
O
/I
l
= -50mA/-2.5mA
Input Current
DDTB122LC
DDTB142JC
I
l
-28
-13
mA
V
I
= -5V
Output Current
I
O(off)
-0.5
μA
V
CC
= -50V, V
I
= 0V
DC Current Gain
DDTB122LC
DDTB142JC
G
l
56
56
V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= -5mA, f = 100MHz
NEW PRODUCT
* Transistor - For Reference Only
Electrical Characteristics @T
A
= 25°C unless otherwise specified R1- Only Types
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
V
I
C
= -50μA
Collector-Emitter Breakdown Voltage
BV
CEO
-40
V
I
C
= -1mA
Emitter-Base Breakdown Voltage DDTB122TC
DDTB142TC
BV
EBO
-5
V
I
E
= -50μA
I
E
= -50μA
Collector Cutoff Current
I
CBO
-0.5
μA
V
CB
= -50V
Emitter Cutoff Current
DDTB122TC
DDTB142TC
I
EBO
-0.5
-0.5
μA
V
EB
= -4V
Collector-Emitter Saturation Voltage
V
CE(sat)
-0.3 V
I
C
= -50mA, I
B
= -2.5mA
DC Current Transfer Ratio
DDTB122TC
DDTB142TC
h
FE
100
100
250
250
600
600
I
C
= -5mA, V
CE
= -5V
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
-50
050100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Derating Curve
A
°
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
d
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DDTB (LO-R1) C
© Diodes Incorporated
Ordering Information (Note 4)
Device
Packaging Shipping
DDTB122LC-7-F
SOT-23 3000/Tape & Reel
DDTB142JC-7-F
SOT-23 3000/Tape & Reel
DDTB122TC-7-F
SOT-23 3000/Tape & Reel
DDTB142TC-7-F
SOT-23 3000/Tape & Reel
NEW PRODUCT
Notes: 4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
XXX
YM
XXX = Product Type Marking Code, See Table on Page 1
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012
Code T U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.

DDTB142JC-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased 200MW 0.47K 10K
Lifecycle:
New from this manufacturer.
Delivery:
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