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VSMF2893SLX01

P1-P3P4-P6
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 26-Feb-13
1
Document Number: 83483
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Infrared Emitting Diode, 890 nm, GaAlAs, DH
DESCRIPTION
VSMF2893SLX01 is an infrared, 890 nm, side looking
emitting diode in GaAlAs (DH) technology with high radiant
power and high speed, molded in clear, untinted plastic
package (with lens) for surface mounting (SMD).
FEATURES
• Package type: surface mount
• Package form: side view
• Dimensions (L x W x H in mm): 2.3 x 2.55 x 2.3
• AEC-Q101 qualified
• Peak wavelength:
p
= 890 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 25°
• Low forward voltage
• Suitable for high pulse current operation
• Package matches with detector VEMD2xx3SSLX01 and
VEMT2xx3SLX01 series
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• IrDA compatible data transmission
•3D TV
• IR touch panels
• Miniature light barrier
• Photointerrupters
• Optical switch
• Shaft encoders
• IR emitter source for proximity applications
Note
• Test conditions see table “Basic Characteristics“
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT I
e
(mW/sr) (deg)
p
(nm) t
r
(ns)
VSMF2893SLX01 20 ± 25 890 30
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMF2893SLX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel Side view
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 26-Feb-13
2
Document Number: 83483
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
/T = 0.5, t
p
100 μs I
FM
200 mA
Surge forward current t
p
= 100 μs I
FSM
1A
Power dissipation P
V
160 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 85 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. figure 9, J-STD-020 T
sd
260 °C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
R
thJA
250 K/W
0
20
40
60
80
100
120
140
160
180
0 102030405060708090100
21343
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
R
thJA
= 250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21344
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
I
F
- Forward Current (mA)
BASIC CHARACTERSITICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 100 mA, t
p
= 20 ms V
F
1.25 1.4 1.6 V
I
F
= 1 A, t
p
= 100 μs V
F
2.3 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
- 1.8 mV/K
I
F
= 100 mA TK
VF
- 1.1 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 mW/cm
2
C
J
125 pF
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms I
e
10 20 30 mW/sr
I
F
= 1 A, t
p
= 100 μs I
e
180 mW/sr
Radiant power I
F
= 100 mA, t
p
= 20 ms
e
40 mW
Temperature coefficient of
e
I
F
= 100 mA TK
e
- 0.35 %/K
Angle of half intensity ± 25 deg
Peak wavelength I
F
= 30 mA
p
870 890 910 nm
Spectral bandwidth I
F
= 30 mA  40 nm
Temperature coefficient of
p
I
F
= 30 mA TK
p
0.25 nm/K
Rise time I
F
= 100 mA, 20 % to 80 % t
r
30 ns
Fall time I
F
= 100 mA, 20 % to 80 % t
f
30 ns
Cut-off frequency I
DC
= 70 mA, I
AC
= 30 mA pp f
c
12 MHz
VSMF2893SLX01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 26-Feb-13
3
Document Number: 83483
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERSITICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
Fig. 8 - Pulse Forward Current vs. Pulse Duration
18873_1
I
F
- Forward Current (mA)
1000
100
10
1
V
F
- Forward Voltage (V)
02413
t
p
= 100 µs
t
p
/T = 0.001
90
92
94
96
98
100
102
104
106
108
110
- 40 - 20 0 20 40 60 80 100
T
amb
- Ambient Temperature (°C)
V
F, rel
- Relative Forward Voltage (%)
I
F
= 100 mA
I
F
= 10 mA
I
F
= 1 mA
21443
t
p
= 20 ms
I
F
- Forward Current (A)
I
e
- Radiant Intensity (mW/sr)
0.001 0.01 0.1 1
0.1
1
10
100
1000
t
p
= 100 µs
800 900
λ - Wavelength (nm)
1000
20082
0
0.25
0.5
0.75
1.0
1.25
Φ
e rel
- Relative Radiant Power
22694
I
e rel
- Relative Radiant Intensity
ϕ - Angular Displacement
0.4 0.2 00.6
0° 10° 20°
0.9
0.8
30°
40°
50°
60°
70°
80°
0.7
1.0
100
1000
0.01 0.1 1 10 100
t
p
- Pulse Duration (ms)
16031
t
p
/T = 0.01
0.05
0.2
0.5
0.1
0.02
T
amb
< 50 °C
I
F
- Forward Current (mA)
P1-P3P4-P6

VSMF2893SLX01

Mfr. #:
Buy VSMF2893SLX01
Manufacturer:
Vishay Semiconductors
Description:
Infrared Emitters - High Power 160mW 890nm 25Deg Side View
Lifecycle:
New from this manufacturer.
Delivery:
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