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NCS2530DTBR2

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1 Publication Order Number:
NCS2530/D
NCS2530
Triple 1.1 mA 200 MHz
Current Feedback Op Amp
with Enable Feature
NCS2530 is a triple 1.1 mA 200 MHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
Features
• −3.0 dB Small Signal BW (A
V
= +2.0, V
O
= 0.5 V
p−p
) 200 MHz Typ
• Slew Rate 450 V/ms
• Supply Current 1.1 mA per amplifier
• Input Referred Voltage Noise 4.0 nV/ Hz
Ǹ
• THD −55 dB (f = 5.0 MHz, V
O
= 2.0 V
p−p
)
• Output Current 100 mA
• Enable Pin Available
• These devices are manufactured with a Pb−Free external lead
finish only.**
Applications
• Portable Video
• Line Drivers
• Radar/Communication Receivers
• Set Top Box
• NTSC/PAL/HDTV
Figure 1. Frequency Response:
Gain (dB) vs. Frequency Av = +2.0, R
L
= 100 W
2
1
−1
−2
−3
−4
−6
0.01 1 100 100
0
NORMAILIZED GAIN(dB)
FREQUENCY (MHz)
0
−5
3
V
S
= ±5V
V
OUT
= 0.7V
Gain = +2
R
F
= 1.2kW
R
L
= 100W
V
S
= ±5V
V
OUT
= 0.5V
V
S
= ±2.5V
V
OUT
= 2.0V
V
S
= ±5V
V
OUT
= 2.0V
V
S
= ±2.5V
V
OUT
= 0.7V
V
S
= ±2.5V
V
OUT
= 0.5V
0.1 10
MARKING
DIAGRAM
TSSOP−16
DT SUFFIX
CASE 948F
2530 = NCS2530
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
http://onsemi.com
1
2
3
4
−IN1
+IN1
V
EE
−IN2
EN1
OUT1
V
CC
EN2
(Top View)
TSSOP−16 PINOUT
+
−
16
1
NCS
2530
ALYW
5
6
7
8
+IN2
V
EE
+IN3
−IN3
10
9
OUT2
V
CC
OUT3
EN3
11
12
13
14
15
16
+
−
+
−
Device Package Shipping†
ORDERING INFORMATION
TSSOP−16* 96 Units/RailNCS2530DTB
TSSOP−16* 2500 Tape & Ree
l
NCS2530DTBR2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*This package is inherently Pb−Free.
**For additional information on our Pb−Free
strategy and soldering details, please download
the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
NCS2530
http://onsemi.com
2
PIN FUNCTION DESCRIPTION
Pin Symbol Function Equivalent Circuit
10, 12, 15 OUTx Output
V
CC
OUT
V
EE
ESD
3, 6 V
EE
Negative Power Supply
2, 5, 7 +INx Non−inverted Input
V
CC
−IN
V
EE
+IN
ESDESD
1, 4, 8 −INx Inverted Input See Above
11, 14 V
CC
Positive Power Supply
9, 13, 16 EN Enable
V
CC
EN
V
EE
ESD
ENABLE PIN TRUTH TABLE
High* Low
Enable Enabled Disabled
*Default open state
Figure 2. Simplified Device Schematic
+IN
C
C
OUT
V
CC
V
EE
−IN
NCS2530
http://onsemi.com
3
ATTRIBUTES
Characteristics Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2) Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter Symbol Rating Unit
Power Supply Voltage V
S
11 V
DC
Input Voltage Range V
I
vV
S
V
DC
Input Differential Voltage Range V
ID
vV
S
V
DC
Output Current I
O
100 mA
Maximum Junction Temperature (Note 3) T
J
150 °C
Operating Ambient Temperature T
A
−40 to +85 °C
Storage Temperature Range T
stg
−60 to +150 °C
Power Dissipation P
D
(See Graph) mW
Thermal Resistance, Junction−to−Air
R
q
JA
178 °C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (T
J
) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is limited
by the associated rise in junction temperature. For the plastic
packages, the maximum safe junction temperature is 150°C.
If the maximum is exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated’’ condition for
an extended period can result in device damage.
Figure 3. Power Dissipation vs. Temperature
1400
1000
800
600
400
0
−50 25 100 15
0
Maximum Power Dissapation (mW)
Ambient Temperature (°C)
1200
200
−25 0 75 12550
P1-P3P4-P6P7-P9P10-P12P13-P14

NCS2530DTBR2

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Buy NCS2530DTBR2
Manufacturer:
ON Semiconductor
Description:
IC OPAMP CFA 200MHZ 16TSSOP
Lifecycle:
New from this manufacturer.
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