©2000 Fairchild Semiconductor International Rev. A, February 2000
KSD1406
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
h
FE1
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 60 V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current 3 A
I
B
Base Current 0.5 A
P
C
Collector Dissipation (T
C
=25°C) 25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 50mA, I
B
= 0 60 V
I
CBO
Collector Cut-off Current V
CB
= 60V, I
E
= 0 100 µA
I
EBO
Emitter Cut-off Current V
EB
= 7V, I
C
= 0 100 µA
h
FE1
h
FE2
DC Current Gain V
CE
= 5V, I
C
= 0.5A
V
CE
= 5V, I
C
= 3A
60
20
300
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 0.3A 0.4 1 V
V
BE
(on) Base-Emitter ON Voltage V
CE
= 5V, I
C
= 0.5A 0.7 1 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
= 0.5A 3 MHz
C
ob
Output Capacitance V
CB
= 10V, f = 1MHz 70 pF
t
ON
Turn ON Time V
CC
= 30V, I
C
= 1A
I
B1
= -I
B2
= 0.2A
R
L
= 30Ω
0.8 µs
t
STG
Storage Time 1.5 µs
t
F
Fall Time 0.8 µs
Classification O Y G
h
FE1
60 ~ 120 100 ~ 200 150 ~ 300
KSD1406
Low Frequency Power Amplifier
• Low Collector-Emitter Saturation Voltage
• Complement to KSB1015
1
1.Base 2.Collector 3.Emitter
TO-220F
