IRGP4650DPbF/IRGP4650D-EPbF
www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 17, 2014
2
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 19μH, R
G
= 10Ω.
R
θ
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
Collector-to-Emitter Breakdown Voltage 600 — — V V
= 0V, I
= 100μA
V
/
T
Temperature Coeff. of Breakdown Voltage — 1.3 — mV/°C V
= 0V, I
= 1mA (25°C-175°C)
— 1.60 1.90 I
= 35A, V
= 15V, T
= 25°C
V
Collector-to-Emitter Saturation Voltage — 1.90 — V I
= 35A, V
= 15V, T
= 150°C
—2.00— I
= 35A, V
= 15V, T
= 175°C
V
Gate Threshold Voltage 4.0 — 6.5 V V
= V
, I
= 1.0mA
V
/
TJ Threshold Voltage temp. coefficient — -18 — mV/°C V
= V
, I
= 1.0mA (25°C - 175°C)
gfe Forward Transconductance — 25 — S V
= 50V, I
= 35A, PW = 60μs
I
Collector-to-Emitter Leakage Current — 1.0 70 μAV
= 0V, V
= 600V
— 770 — V
= 0V, V
= 600V, T
= 175°C
V
Diode Forward Voltage Drop — 2.0 3.0 V I
= 35A
—1.4— I
= 35A, T
= 175°C
I
Gate-to-Emitter Leakage Current — — ±100 nA V
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
Total Gate Charge (turn-on) — 69 104 I
= 35A
Q
Gate-to-Emitter Charge (turn-on) — 18 27 nC V
= 15V
Q
Gate-to-Collector Charge (turn-on) — 29 44 V
= 400V
E
Turn-On Switching Loss — 390 508 I
= 35A, V
= 400V, V
= 15V
E
Turn-Off Switching Loss — 632 753 μJR
= 10
, L = 200μH, L
= 150nH, T
= 25°C
E
Total Switching Loss — 1022 1261
Energy losses include tail & diode reverse recovery
t
Turn-On delay time — 46 56 I
= 35A, V
= 400V, V
= 15V
t
Rise time —3342nsR
= 10
, L = 200μH, L
= 150nH, T
= 25°C
t
Turn-Off delay time — 105 117
t
Fall time — 44 54
E
Turn-On Switching Loss — 1013 — I
= 35A, V
= 400V, V
=15V
E
Turn-Off Switching Loss — 929 — μJR
=10Ω, L=200μH, L
=150nH, T
= 175°C
E
Total Switching Loss — 1942 —
Energy losses include tail & diode reverse recovery
t
Turn-On delay time — 43 — I
= 35A, V
= 400V, V
= 15V
t
Rise time — 35 — ns R
= 10
, L = 200μH, L
= 150nH
t
Turn-Off delay time — 127 — T
= 175°C
t
Fall time — 61 —
C
Input Capacitance — 2113 — pF V
= 0V
C
Output Capacitance — 197 — V
= 30V
C
Reverse Transfer Capacitance — 65 — f = 1.0Mhz
T
= 175°C, I
= 140A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
= 480V, Vp 600V
Rg = 10
, V
= +20V to 0V
SCSOA Short Circuit Safe Operating Area V
= 400V, Vp 600V
Rg = 10
, V
= +15V to 0V
Erec Reverse Recovery Energy of the Diode — 304 — μJT
= 175°C
t
Diode Reverse Recovery Time — 120 — ns V
= 400V, I
= 35A
I
Peak Reverse Recovery Current — 25 — A V
= 15V, Rg = 10
, L =210μH, L
= 150nH
Conditions
μs5——