©2002 Fairchild Semiconductor Corporation Rev. A, July 2002
FJV3106R
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 50 V
V
CEO
Collector-Emitter Voltage 50 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current 100 mA
P
C
Collector Power Dissipation 200 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
=10µA, I
E
=0 50 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
=100µA, I
B
=0 50 V
I
CBO
Collector Cut-off Current V
CB
=40V, I
E
=0 0.1 µA
h
FE
DC Current Gain V
CE
=5V, I
C
=5mA 68
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA 0.3 V
C
ob
Output Capacitance V
CE
=10mA, I
E
=0
f=1.0MHz
3.7 pF
f
T
Current Gain Bandwidth Product V
CB
=10V, I
C
=5mA 250 MHz
V
I
(off) Input Off Voltage V
CE
=5V, I
C
=100µA0.3 V
V
I
(on) Input On Voltage V
CE
=0.3V, I
C
=1mA 1.4 V
R
1
Input Resistor 7 10 13 KΩ
R
1
/R
2
Resistor Ratio 0.19 0.21 0.24
FJV3106R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R
1
=10KΩ, R
2
=47KΩ)
• Complement to FJV4106R
Equivalent Circuit
B
E
C
R1
R2
R26
Marking
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
