OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-20CWT10FN

P1-P3P4-P6P7-P7
VS-20CUT10, VS-20CWT10FN
www.vishay.com
Vishay Semiconductors
Revision: 02-Nov-11
4
Document Number: 94651
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
Allowable Lead Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0 2 4 6 8 10 12 14 16
145
150
155
160
165
170
175
180
DC
Square wave (D = 0.50)
80 % rated V
r
applied
see note
(1)
Average Forward Current - I
F(AV)
(A)
Average Power Loss (W)
0 3 6 9 12 15
0
2
4
6
8
10
180°
120°
90°
60°
30°
DC
RMS Limit
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
10
100
1000
10 100 1000 10 000
1
10
100
T
J
= 25 °C
Rectangular Pulse Duration (μs)
Avalanche Current (A)
1 10 100
T
J
= 125 °C
T
J
= 175 °C
VS-20CUT10, VS-20CWT10FN
www.vishay.com
Vishay Semiconductors
Revision: 02-Nov-11
5
Document Number: 94651
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions
I-PAK (TO-251AA) www.vishay.com/doc?95024
D-PAK (TO-252AA) www.vishay.com/doc?95448
Part marking information
I-PAK (TO-251AA) www.vishay.com/doc?95025
D-PAK (TO-252AA) www.vishay.com/doc?95059
Packaging information www.vishay.com/doc?95033
SPICE model www.vishay.com/doc?95041
2 - Current rating (20 A)
1 - Vishay Semiconductors product
5
- T = Trench
6 - Voltage rating (10 = 100 V)
4
- Package:
U = I-PAK
W = D-PAK
3
- Circuit configuration:
C = Common cathode
8
- D-PAK, I-PAK:
None = Tube (75 pieces)
D-PAK only:
TR = Tape and reel
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
7
- TO-252AA (D-PAK)
Device code
51 32 4 6 7 8
VS- 20 C U T 10 FN TRL
Document Number: 95024 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 24-May-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
I-PAK - S
Outline Dimensions
Vishay Semiconductors
DIMENSIONS FOR I-PAK - S in millimeters
SYMBOL
DIMENSIONAL REQUIREMENTS
MIN. NOM. MAX.
E 6.40 6.60 6.70
L 3.98 4.13 4.28
L4 0.66 0.76 0.86
L5 1.96 2.16 2.36
D 6.00 6.10 6.20
H 11.05 11.25 11.45
b 0.64 0.76 0.88
b2 0.77 0.84 1.14
b3 5.21 5.34 5.46
b4 0.41 0.51 0.61
e 2.286 BSC
A 2.20 2.30 2.38
c 0.40 0.50 0.60
c2 0.40 0.50 0.60
D1 5.30 - -
E1 4.40 - -
E
D
L5
L4
ee
A
c2
L
c
H
D1
1
2
3
4
b
b4
b2
b3
E1
P1-P3P4-P6P7-P7

VS-20CWT10FN

Mfr. #:
Buy VS-20CWT10FN
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 2x10 Amp 100 Volt 610 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet