VS-20CUT10, VS-20CWT10FN
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Vishay Semiconductors
Revision: 02-Nov-11
2
Document Number: 94651
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
50 % duty cycle at T
C
= 159 °C, rectangular waveform
10
A
per device 20
Maximum peak one cycle
non-repetitive surge current per leg
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
610
A
10 ms sine or 6 ms rect. pulse 110
Non-repetitive avalanche
energy per leg
E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 12 mH 54 mJ
Repetitive avalanche current per leg I
AR
Limited by frequency of operation and time pulse duration
so that T
J
< T
J
max. I
AS
at T
J
max. as a function of time pulse
(see fig. 8)
I
AS
at
T
J
max.
A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop per leg V
FM
(1)
10 A
T
J
= 25 °C
0.735 0.810
V
20 A 0.840 0.890
10 A
T
J
= 125 °C
0.615 0.660
20 A 0.730 0.770
Reverse leakage current per leg I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-50μA
T
J
= 125 °C - 4 mA
Junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 400 - pF
Series inductance per leg L
S
Measured lead to lead 5 mm from package body 8.0 - nH
Maximum voltage rate of change dV/dt Rated V
R
- 10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
2
°C/W
Maximum thermal resistance,
junction to case per device
1
Typical thermal resistance,
case to heatsink
R
thCS
0.3
Approximate weight
0.3 g
0.01 oz.
Marking device
Case style I-PAK 20CUT10
Case style D-PAK 20CWT10FN
