© 2006 IXYS All rights reserved
4 - 4
VID 160-12P1
VIO 160-12P1 VDI 160-12P1
IXYS reserves the right to change limits, test conditions and dimensions.
0650
B3
0 50 100 150 200
0
10
20
30
40
0
30
60
90
120
0 50 100 150 200
0
10
20
30
40
0
200
400
600
800
0,00001 0,0001 0,001 0,01 0,1 1
0,00001
0,0001
0,001
0,01
0,1
1
0 8 16 24 32 40 48 56
0
5
10
15
20
25
0
300
600
900
1200
1500
0 8 16 24 32 40 48 56
0
10
20
30
40
50
0
60
120
180
240
300
single pulse
V
CE
= 600V
V
GE
= ±15V
R
G
= 6.8Ω
T
J
= 125°C
V
CE
= 600V
V
GE
= ±15V
I
C
= 100A
T
J
= 125°C
0 200 400 600 800 1000 1200
0
40
80
120
160
200
240
R
G
= 6.8Ω
T
J
= 125°C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= ±15V
R
G
= 6.8Ω
T
J
= 125°C
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 100A
T
J
= 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
156T120
156T120
156T120
156T120
156T120
VDI...160-12P1
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
