BUV48A

P1-P3 P4-P6 P7-P8

November 2009 Doc ID 5989 Rev 9 1/8

8

BUV48A

High voltage fast switching NPN power transistor

Features

■ High current capability

■ Fast switching speed

Applications

■ Switching mode power supplies

■ Flyback and forward single transistor low power

converter

Description

The device is a multiepitaxial mesa NPN

transistor mounted in TO-247 plastic package.

It is intended for switching and industrial

applications from single and three-phase mains.

Figure 1. Internal schematic diagram

1

2

3

TO-247

Table 1. Device summary

Order code Marking Package Packaging

BUV48A BUV48A TO-247 Tube

www.st.com

Absolute maximum ratings BUV48A

2/8 Doc ID 5989 Rev 9

1 Absolute maximum ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CER

Collector-emitter voltage (R

BE

= 10 Ω) 1000 V

V

CES

Collector-emitter voltage (V

BE

= 0) 1000 V

V

CEO

Collector-emitter voltage (I

B

= 0) 450 V

V

EBO

Emitter-base voltage (I

C

= 0) 7 V

I

C

Collector current 15 A

I

CM

Collector peak current 30 A

I

CP

Collector peak current non repetitive (t

p

< 20 µs) 55 A

I

B

Base current 4 A

I

BM

Base peak current 20 A

P

TOT

Total dissipation at T

case

= 25 °C 125 W

T

STG

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thJC

Thermal resistance junction-case __max 1 °C/W

BUV48A Electrical characteristics

Doc ID 5989 Rev 9 3/8

2 Electrical characteristics

T

case

= 25 °C; unless otherwise specified.

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CES

Collector cut-off current

(V

BE

= 0)

V

CE

= 1000 V

V

CE

= 1000 V T

c

= 125 °C

200

2

µA

mA

I

CER

Collector cut-off current

(R

BE

= 10Ω)

V

CE

= 1000 V

V

CE

= 1000 V

T

c

= 125 °C

500

4

µA

mA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 5 V 1 mA

V

CEO(sus)

(1)

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

sustaining voltage

(I

B

= 0)

I

C

= 200 mA 450 V

V

EBO

Emitter-base voltage

(I

C

= 0)

I

E

= 50 mA 7 30 V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 8 A I

B

= 1.6 A

I

C

= 12 A I

B

= 2.4 A

1.5

5

V

V

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 8 A I

B

= 1.6 A 1.6 V

h

FE

(1)

DC current gain I

C

= 8 A V

CE

= 5 V 8

t

on

t

s

t

f

Resistive load

Turn-on time

Storage time

Fall time

V

CC

= 150 V I

C

= 8 A

I

B1

= -I

B2

= 1.6 A

1

3

0.8

µs

µs

µs

t

s

t

f

Inductive load

Storage time

Fall time

V

CC

= 300 V I

C

= 8 A

V

BE

= -5 V I

B1

= 1.6 A

L

B

= 3 µH

3

0.13

µs

µs

t

s

t

f

Inductive load

Storage time

Fall time

V

CC

= 300 V I

C

= 8 A

V

BE

= -5 V I

B1

= 1.6 A

L

B

= 3 µH T

C

= 125 °C

5

0.4

µs

µs

P1-P3 P4-P6 P7-P8

BUV48A

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT NPN High Volt Power

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

BUV48A