AOD3C60
Symbol Min Typ Max Units
600
700
BV
DSS
/∆TJ
0.59
V/
o
C
1
10
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
3 4 5 V
R
DS(ON)
1.15 1.4 Ω
g
FS
2.8 S
V
SD
0.76 1 V
I
S
Maximum Body-Diode Continuous Current 3 A
I
SM
19 A
C
iss
648 pF
C
oss
29 pF
C
o(er)
24 pF
C
o(tr)
40 pF
C
rss
1.5 pF
R
g
5.9 Ω
Q
g
10.3 15 nC
Q
gs
4.3 nC
Q
gd
1.8 nC
t
D(on)
22 ns
t
r
18 ns
t
D(off)
32 ns
t
f
19 ns
t
rr
238 ns
Q
rr
2.5
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=3A,dI/dt=100A/µs,V
DS
=100V
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=3A,
R
G
=25Ω
Turn-Off Fall Time
BV
DSS
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=1A
Reverse Transfer Capacitance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
V
DS
=0V, V
GS
=±30V
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
Total Gate Charge
V
GS
=10V, V
DS
=480V, I
D
=3A
Gate Source Charge
µA
Gate Drain Charge
V
DS
=5V,
I
D
=250µA
V
DS
=480V, T
J
=125°C
I
S
=1A,V
GS
=0V
V
DS
=40V, I
D
=1.5A
Forward Transconductance
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
Effective output capacitance, time
related
J
V
GS
=0V, V
DS
=100V, f=1MHz
I
DSS
Zero Gate Voltage Drain Current
V
DS
=600V, V
GS
=0V
Body Diode Reverse Recovery Charge
I
F
=3A,dI/dt=100A/µs,V
DS
=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
Body Diode Reverse Recovery Time
V
GS
=0V, V
DS
=100V, f=1MHz
Effective output capacitance, energy
related
I
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=2.7A, V
DD
=150V, R
G
=10Ω, Starting T
J
=25°C
I. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
Rev.1.0 April 2013 www.aosmd.com Page 2 of 6
