MP3352DQ-LF-Z

MP3352
60V, 2.5A Integrated Photo Flash Charger
with IGBT Driver and Quench
MP3352 Rev. 0.9 www.MonolithicPower.com 1
11/12/2008 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2008 MPS. All Rights Reserved.
The Future of Analog IC Technology
DESCRIPTION
The MP3352 is a fast, highly efficient, precision
high-voltage photo-flash charger with integrated
IGBT driver for xenon flash applications. The
programmable peak current is up to 2.5A to
ensure fast charging time. A 200m internal
power switch minimizes the conduction loss. In
addition, a 60V maximum voltage lowers the
transformer turns ratio and improves the
switching loss associated with the primary
leakage inductance. External feedback provides
3% charge accuracy.
The MP3352 is available in a 16-pin 3mm x
3mm QFN package.
FEATURES
Integrated 60V, 200m Power Switch
Programmable Peak Current Up to 2.5A
3% Charge Accuracy
<1uA Shutdown Current
Integrated IGBT Driver
Integrated Quench Feature
APPLICATIONS
Digital Still Cameras
Optical Film Cameras
Mobile Phones With Camera
PDAs With Camera
“MPS” and “The Future of Analog IC Technology” are Registered Trademarks
of Monolithic Power Systems, Inc.
TYPICAL APPLICATION
MP3352
SW
RDYB
SW
FB
ISET
IGBTOUT
QREF
QSNS
GND
NCNC
IGBTIN
PGND
PGND
CHARGE
VIN
D1
D2
600V/1A
FGR15N40A
T1A
T2
TP8
VIN
CHAG
RDYB
QREF
QSNS
AGND
IGBTIN
+
R13
10k
R9
33.2k
MP3352 – 60V, 2.5A INTEGRATED PHOTO FLASH CHARGER WITH IGBT DRIVER AND QUENCH
MP3352 Rev. 0.9 www.MonolithicPower.com 2
11/12/2008 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2008 MPS. All Rights Reserved.
PACKAGE REFERENCE
1
2
3
4
13141516
8765
12
11
10
9
Part Number* Package Temperature
MP3352DQ QFN16-3
–40°C to +85°C
*
For Tape & Reel, add suffix –Z (e.g. MP3352DQ–Z)
For RoHS compliant packaging, add suffix –LF (e.g.
MP3352DQ–LF–Z)
ABSOLUTE MAXIMUM RATINGS
(1)
V
IN
to GND ........................................-0.3V to 6V
CHARGE, ISET, IGBTIN, RDYB, QREF, QSNS
to GND.............................................. -0.3V to 6V
FB to GND ........................................-0.3V to 6V
SW to GND.....................................-0.3V to 60V
Maximum Operating Frequency .............400kHz
Operating Temperature Ranges:-40°C to +85°C
Storage Temperature ...............-55°C to +150°C
Junction Temperature.............................+150°C
Lead Temperature (Solder) ....................+260°C
Thermal Resistance
(2)
θ
JA
θ
JC
QFN16 (3mmx3mm)............... 50 ...... 12... °C/W
Notes:
1) Exceeding these ratings may damage the device.
2) Measured on approximately 1” square of 1 oz copper.
ELECTRICAL CHARACTERISTICS
(V
IN
=V (CHARGE)=3.3V, TA = +25°C, unless otherwise noted.)
Parameter Conditions Min Typ Max Unit
Photoflash Capacitor Charger
V
IN
Voltage Range
3 6 V
V
IN
UVLO Rising edge, hysteresis = 200mV 2.7 2.8 2.9 V
V
IN
Quiescent Current V(CHARGE)=High, V(SW) = 0,
free run by T
ONMAX
1 2 mA
V
IN
Quiescent Current Charge Complete,
V(CHARGE)=High, V(FB) = 1.3V
50 µA
Shutdown Current from V
IN
V(CHARGE)=Low 1 µA
V
SW
Leakage Current V
IN
=3.3V,V
SW
=60V, in Shutdown 2 µA
SW ON resistance between
SW and GND
Switch turn-on
0.2
Charge Input High Voltage 2.4 V
Charge Input Low Voltage 0.6 V
Pull-down resistance of
CHARGE pin
V(CHARGE)=3.3V 100K
I
PEAK1
R
SET
=33.2k 1.36 1.51 1.66 A
I
PEAK2
R
SET
=100k 0.4 0.5 0.6 A
Charge completion detect
voltage at FB
1.176 1.20 1.224 V
FB input bias current I(FB) -0.2 0.2 µA
DCM Comparator threshold With 1.2K (1%) connected to FB 15 25 35 mV
MP3352 – 60V, 2.5A INTEGRATED PHOTO FLASH CHARGER WITH IGBT DRIVER AND QUENCH
MP3352 Rev. 0.9 www.MonolithicPower.com 3
11/12/2008 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited.
© 2008 MPS. All Rights Reserved.
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
=V (CHARGE)=3.3V, TA = +25°C, unless otherwise noted.)
Parameter Conditions Min Typ Max Unit
RDYB Leakage Current V(RDYB)=3.3V 1 µA
RDYB Output Low Voltage I
SINK
= 2mA
0.2 V
MAX T
ON
Maximum T
ON
time 45 75 105 µs
Thermal Shutdown Rising edge, hysteresis = 15
o
C 150
o
C
QREF input current Q
REF
=0.2V to 1.2V -0.1 0.1 µA
QSNS-QREF offset voltage Q
REF
=0.2V to 1.2V -50 50 mV
QSNS input current Q
REF
=0.2V to 1.2V -0.1 0.1 µA
QSNS to IGBT Delay Q
REF
=0.2V to 1.2V 2 µs
IGBT Driver
IGBTOUT pull-up ON
resistance
5
IGBTOUT pull-down ON
resistance
5
IGBTIN Input High Voltage 2.4 V
IGBTIN Input Low Voltage 0.6 V
Propagation delay IGBTIN rising/falling edge to
IGBTOUT rising/falling edge,
C
GATE
=6500pF
45 ns
IGBTOUT rise time C
GATE
=6500pF,20% to 80% 60 ns
IGBTOUT fall time C
GATE
=6500pF,20% to 80% 70 ns
Pull down resistance of
IGBTIN
100K
PIN FUNCTIONS
Pin # Name Function
1 ISET Peak Current Set Input. The peak current is 5
X10
4
the current flow out of this pin.
2 GND Analog Ground. Tie it directly to local ground plane.
3 QREF Quench reference input.
4 QSNS Quench sense input from light sensor.
5 IGBTOUT Output Drive for IGBT Gate. Connect this pin to the gate of the IGBT.
6 VIN Input Supply Pin. Connect it to system supply voltage. Bypass VIN to GND
with a 2x10µF or greater ceramic capacitor.
7, 8 PGND Power Ground. Ground connection for the power switch.
9 CHARGE Charge Enable Pin. A low-to-high transition on this pin puts the part into power
delivery mode. Once the target voltage is reached, the part will stop charging
the output. Toggle this pin will start charging again. Bring this pin low will
terminate the power delivery and put the part in shutdown.
10, 11 N/C No Connect
12, 13 SW Switch Pin. This is the drain of the internal power switch.
14 IGBTIN Logic Input Pin for IGBT Drive.
15 RDYB Open-Drain Power-Ready Output. RDYB goes low when the output voltage is
reached.
16 FB Feedback Pin. Trip voltage is 1.2V.

MP3352DQ-LF-Z

Mfr. #:
Manufacturer:
Monolithic Power Systems (MPS)
Description:
Display Drivers & Controllers 2A 60V Xenon Flash Charger
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet