Characteristics T1235T-8T
4/9 DocID024572 Rev 3
Figure 5. On-state characteristics (maximum
values)
Figure 6. Surge peak on-state current versus
number of cycles
I(A)
TM
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
j
=25 °C
T
j
=150 °C
V (V)
TM
T max:
j
V = 0.85 V
t0
R = 37 m
d
W
I(A)
TSM
0
10
20
30
40
50
60
70
80
90
100
1 10 100 1000
Non repetitive
T
j
initial=25 °C
Non repetitive
T
j
initial=25 °C
Repetitive
T
C
=131 °C
Number of cycles
One cycle
t = 20 ms
Figure 7. Non repetitive surge peak on-state
current and corresponding values of I
2
t
Figure 8. Relative variation of gate trigger
current and gate voltage versus junction
temperature (typical values)
I (A), I²t (A²s)
TSM
10
100
1000
0.01 0.10 1.00 10.00
sinusoidal pulse with width t <10 ms
p
t(ms)
p
I²t
I
TSM
T initial = 25 °C
j
dl/dt limitation: 100 A / µs
I , V [T ] / I , V [T = 25 °C]
GT GT j GT GT j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
T (°C)
C
V
GT
I Q1 - Q2
GT
IQ3
GT
Figure 9. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
Figure 10. Relative variation of holding current
and latching current versus junction
temperature (typical values)
0
1
2
3
4
5
25 50 75 100 125 150
dV/dt [T
j
] / dV/dt [T
j
= 150 °C]
T
j
(°C)
V
D
=V
R
= 402 V
I , I [T ] / I , I [T = 25 °C]
HL j HL j
0.0
0.5
1.0
1.5
2.0
-50 -25 0 25 50 75 100 125 150
I
H
I
L
T (°C)
j
