VS-FC420SA15
www.vishay.com
Vishay Semiconductors
Revision: 13-Apr-18
2
Document Number: 96060
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
-55 - 175
°C
Operating storage temperature range T
Stg
-40 - 150
Junction to case MOSFET R
thJC
- - 0.165
°C/W
Case to heatsink Module R
thCS
Flat, greased surface - 0.1 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf. in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf. in)
Case style SOT-227
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 500 μA 150 - - V
Breakdown voltage temperature coefficient V
(BR)DSS
/T
J
Reference to 25 °C, I
D
= 1.0 mA - 9.0 - mV/°C
Static drain to source on-resistance R
DS(on)
V
GS
= 10 V, I
D
= 200 A - 1.93 2.75 m
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 1.0 mA 1.80 3.46 5.4 V
Temperature coefficient of threshold voltage V
GE(th)
/T
J
V
DS
= V
GS
, I
D
= 1.0 mA
(25 °C to 125 °C)
-9.6 - mV/°C
Forward transconductance g
fs
V
DS
= 15 V, I
D
= 100 A, V
GS
= 10 V - 200 - S
Drain to source leakage current I
DSS
V
DS
= 150 V, V
GS
= 0 V - 0.5 10.0
μA
V
DS
= 150 V, V
GS
= 0 V, T
J
= 150 °C - 19 -
Gate to source leakage I
GSS
V
GS
= ± 20 V - - ± 200 nA
Total gate charge Q
g
I
D
= 250 A
V
DS
= 75 V
V
GS
= 10 V
-250 -
nCGate to source charge Q
gs
-79 -
Gate to drain ("Miller") charge Q
gd
-82 -
Turn-on delay time t
d(on)
V
DD
= 75 V
I
D
= 100 A
R
g
= 1
V
GS
= 10 V
-139 -
ns
Rise time t
r
-285 -
Turn-off delay time t
d(off)
-120 -
Fall time t
f
-142 -
Input capacitance C
iss
V
GS
= 0 V
V
DS
= 25 V
f = 1 MHz
- 13.7 -
nFOutput capacitance C
oss
-2.2 -
Reverse transfer capacitance C
rss
- 0.104 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current (body diode) I
S
MOSFET symbol
showing the
integral reverse
p-n junction diode
- - 476
A
Pulsed source current (body diode) I
SM
- - 850
Diode forward voltage V
SD
I
S
= 250 A, V
GS
= 0 V - 0.95 - V
Reverse recovery time t
rr
T
J
= 25 °C, I
F
= I
S
= 50 A,
dI/dt = 100 A/μs, V
R
= 50 V
- 171 - ns
Reverse recovery charge Q
rr
- 1032 - nC
Reverse recovery current I
RM
-12 - A
