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IXTT52N30P
P1-P3
P4-P5
IXTT52N30P
IXTQ52N30P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fi
g. 7. I
nput Admi
ttan
ce
0
10
20
30
40
50
60
70
80
90
100
3.
5
4.0
4.5
5.0
5.
5
6.
0
6.5
7.
0
7.5
8.0
V
GS
- V
olts
I
D
-
Amper
e
s
T
J
= 125º
C
25ºC
- 40
ºC
Fi
g. 8. Transconduct
ance
0
10
20
30
40
50
60
0
1
02
03
04
0
5
06
07
08
09
0
1
0
0
I
D
-
Amper
es
g
f s
-
Siemens
T
J
= - 40
ºC
125º
C
25º
C
Fi
g. 9. Forw
a
rd V
ol
tage Drop of I
n
tri
ns
i
c
Di
ode
0
20
40
60
80
100
120
140
160
0
.
30
.
40
.
50
.
60
.
70
.
80
.
91
.
01
.
11
.
21
.
31
.
4
V
SD
- V
o
lts
I
S
-
Amper
es
T
J
= 125º
C
T
J
= 25º
C
Fi
g
. 10
. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
Q
G
- NanoC
o
ul
o
mb
s
V
GS
- V
o
lts
V
DS
= 150V
I
D
= 26
A
I
G
= 10m
A
Fi
g. 11
. Capaci
tance
100
1,
000
10,000
0
5
10
15
20
25
30
35
4
0
V
DS
- V
olt
s
Capaci
t
ance -
PicoFar
ad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fi
g.
12. Forw
ard-
Bi
as Safe Operati
ng Ar
ea
1
10
100
1000
10
100
1,000
V
DS
- V
ol
ts
I
D
-
Ampere
s
T
J
= 150º
C
T
C
= 25
º
C
Sin
gle
Pu
ls
e
100µs
1ms
R
DS(on)
Limit
25µs
DC
10m
s
© 2013 IXYS CORPORATION, All Rights Reserved
IXTT52N30P
IXTQ52N30P
IXYS REF: T_52N30P(6S) 9-26-13
Fi
g. 1
3. M
a
xi
mum Transi
ent Thermal
I
mpedance
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.
1
Pu
lse Widt
h
-
Sec
on
d
Z
(th)JC
- º
C
/ W
Fi
g.
13. M
axi
mu
m Tr
ansi
ent
Th
er
mal
I
mped
ance
aaaaaa
0.
5
P1-P3
P4-P5
IXTT52N30P
Mfr. #:
Buy IXTT52N30P
Manufacturer:
Description:
MOSFET 52 Amps 300V 0.066 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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