www.clare.com
DS-CPC3730C-R00B.2
1
CPC3730C
N-Channel Depletion-Mode
Vertical DMOS FETs
Part # Description
CPC3730C SOT-89 (100/Tube)
CPC3730CTR SOT-89 (2000/Reel)
BV
DSX
/
BV
DGX
R
DS(ON)
(max)
I
DSS
(min) Package
350V 30
Ω 140mA SOT-89
Applications
Features
Description
Ordering Information
Package Pinout
• Ignition modules
• Normally-on switches
• Solid state relays
• Converters
• Telecommunications
• Power supply
• Depletion mode device offers low R
DS(ON)
at cold
temperatures
• Low on resistance 30 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 350V
• Low V
GS(off)
voltage -1.6 to -3.9V
• Small package size SOT-89
The CPC3730C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3730C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730C offers a low 30 ohm maximum
on-state resistance at 25
ºC.
The CPC3730C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Switching Waveform
90%
10%
90%
90%
10%
10%
PULSE
GENERATO
R
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
90%
10%
90%
90%
10%
10%
PULSE
GENERATO
R
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Test Circuit
