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DCX122LH-7

P1-P3P4-P6
DCX (LO-R1) H
Document number: DS30429 Rev. 4 - 2
1 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DCX (LO-R1) H
COMPLEMENTARY NPN/PNP PRE-BIASED
SMALL SIGNAL DUAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Built-In Biasing Resistors
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
P/N
R1 (NOM)
R2 (NOM)
DCX122LH
DCX142JH
DCX122TH
DCX142TH
0.22K
0.47K
0.22K
0.47K
10K
10K
OPEN
OPEN
Mechanical Data
Case: SOT-563
Case Material: Molded Plastic; UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (Approximate)
Ordering Information (Note 4)
Device
Packaging
Shipping
DCX122LH-7
SOT-563
3,000/Tape & Reel
DCX142JH-7
SOT-563
3,000/Tape & Reel
DCX122TH-7
SOT-563
3,000/Tape & Reel
DCX142TH-7
SOT-563
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2002
2003
2004
2005
2006
2007
2008
2009
2010
2011
2012
Code
N
P
R
S
T
U
V
W
X
Y
Z
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
R
1
R
1
R
2
R
2
R
1
R
1
R
1
, R
2
R
1
Only
SCHEMATIC DIAGRAM, TOP VIEW
CXX = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
CXXYM
SOT-563
SOT-563
e3
DCX (LO-R1) H
Document number: DS30429 Rev. 4 - 2
2 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DCX (LO-R1) H
Maximum Ratings NPN Section (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
50
V
Input Voltage DCX122LH
DCX142JH
V
IN
-5 to +6
-5 to +6
V
Input Voltage DCX122TH
DCX142TH
V
EBO (MAX)
5
V
Output Current All
I
C
100
mA
Power Dissipation (Notes 5 & 6)
P
d
150
mW
Thermal Resistance, Junction to Ambient Air (Note 5)
R
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Maximum Ratings PNP Section (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Supply Voltage
V
CC
-50
V
Input Voltage DCX122LH
DCX142JH
V
IN
+5 to -6
+5 to -6
V
Input Voltage DCX122TH
DCX142TH
V
EBO (MAX)
-5
V
Output Current All
I
C
-100
mA
Power Dissipation (Notes 5 & 6)
P
d
150
mW
Thermal Resistance, Junction to Ambient Air (Note 5)
R
JA
833
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Notes: 5. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
6. NPN Section, PNP Section, or maximum combined.
DCX (LO-R1) H
Document number: DS30429 Rev. 4 - 2
3 of 6
www.diodes.com
April 2015
© Diodes Incorporated
DCX (LO-R1) H
Electrical Characteristics NPN Section, R1, R2 Types (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DCX122LH
DCX142JH
V
l(off)
0.3
0.3
V
V
CC
= 5V, I
O
= 100A
DCX122LH
DCX142JH
V
l(on)
2.0
2.0
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage
V
O(on)
0.3V
V
I
O
/I
l
= 5mA/0.25mA
Input Current
DCX122LH
DCX142JH
I
l
28
13
mA
V
I
= 5V
Output Current
I
O(off)
0.5
A
V
CC
= 50V, V
I
= 0V
DC Current Gain
DDCX122LH
DDCX142JH
G
l
56
56
V
O
= 5V, I
O
= 10mA
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= 10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section, R1-Only (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
V
I
C
= 50µA
Collector-Emitter Breakdown Voltage
BV
CEO
40
V
I
C
= 1mA
Emitter-Base Breakdown Voltage DCX122TH
DCX142TH
BV
EBO
5
V
I
E
= 50µA
I
E
= 50µA
Collector Cut-Off Current
I
CBO
0.5
µA
V
CB
= 50V
Emitter Cut-Off Current
DCX122TH
DCX142TH
I
EBO
0.5
0.5
µA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
0.3
V
I
C
= 5mA, I
B
= 0.25mA
DC Current Transfer Ratio
DCX122TH
DCX142TH
h
FE
100
100
250
250
600
600
I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics PNP Section, R1, R2 Types (@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Input Voltage
DCX122LH
DCX142JH
V
l(off)
-0.3
-0.3
V
V
CC
= -5V, I
O
= -100µA
DCX122LH
DCX142JH
V
l(on)
-2.0
-2.0
V
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
Output Voltage
V
O(on)
-0.3V
V
I
O
/I
l
= -5mA/-0.25mA
Input Current
DCX122LH
DCX142JH
I
l
-28
-13
mA
V
I
= -5V
Output Current
I
O(off)
-0.5
µA
V
CC
= -50V, V
I
= 0V
DC Current Gain
DCX122LH
DCX142JH
G
l
56
56
V
O
= -5V, I
O
= -10mA
Gain-Bandwidth Product*
f
T
200
MHz
V
CE
= -10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
P1-P3P4-P6

DCX122LH-7

Mfr. #:
Buy DCX122LH-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased 150MW 0.22K
Lifecycle:
New from this manufacturer.
Delivery:
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