MC14069UBCPG

© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 11
1 Publication Order Number:
MC14069UB/D
MC14069UB
Hex Inverter
The MC14069UB hex inverter is constructed with MOS P−channel
and N−channel enhancement mode devices in a single monolithic
structure. These inverters find primary use where low power
dissipation and/or high noise immunity is desired. Each of the six
inverters is a single stage to minimize propagation delays.
Features
Supply Voltage Range = 3.0 Vdc to 18 Vdc
Capable of Driving Two Low−Power TTL Loads or One
Low−Power Schottky TTL Load Over the Rated Temperature
Range
Triple Diode Protection on All Inputs
Pin−for−Pin Replacement for CD4069UB
Meets JEDEC UB Specifications
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to V
SS
)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage Range 0.5 to +18.0 V
V
in
, V
out
Input or Output Voltage Range
(DC or Transient)
0.5 to V
DD
+ 0.5 V
I
in
, I
out
Input or Output Current
(DC or Transient) per Pin
±10 mA
P
D
Power Dissipation, per Package
(Note 1)
500 mW
T
A
Ambient Temperature Range 55 to +125 °C
T
stg
Storage Temperature Range 65 to +150 °C
T
L
Lead Temperature
(8−Second Soldering)
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Temperature Derating: “D/DW” Packages: –7.0 mW/_C From 65_C To 125_C
This device contains protection circuitry to guard against damage due to high
static voltages or electric fields. However, precautions must be taken to avoid
applications of any voltage higher than maximum rated voltages to this
high−impedance circuit. For proper operation, V
in
and V
out
should be constrained
to the range V
SS
(V
in
or V
out
) V
DD
.
Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either V
SS
or V
DD
). Unused outputs must be left open.
MARKING DIAGRAMS
SOIC−14
TSSOP−14
1
14
14069UG
AWLYWW
14
069U
ALYWG
G
1
14
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G or G = Pb−Free Package
SOEIAJ−14
1
14
MC14069UB
ALYWG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
(Note: Microdot may be in either location)
SOIC−14
D SUFFIX
CASE 751A
TSSOP−14
DT SUFFIX
CASE 948G
SOEIAJ−14
F SUFFIX
CASE 965
11
12
13
14
8
9
105
4
3
2
1
7
6
OUT 5
IN 5
OUT 6
IN 6
V
DD
OUT 4
IN 4
OUT 2
IN 2
OUT 1
IN 1
V
SS
OUT 3
IN 3
PIN ASSIGNMENT
MC14069UB
http://onsemi.com
2
Figure 1. Logic Diagram Figure 2. Circuit Schematic
13
11
9
5
3
1
12
10
8
6
4
2
V
DD
= PIN 14
V
SS
= PIN 7
V
DD
V
SS
OUTPUT
INPUT*
*Double diode protection on all inputs not shown
Figure 3. Switching Time Test Circuit and Waveforms
PULSE
GENERATOR
V
DD
V
SS
7
INPUT
OUTPUT
C
L
14
20 ns 20 ns
V
DD
V
SS
V
OH
V
OL
t
THL
t
TLH
OUTPUT
INPUT
t
PHL
t
PLH
90%
50%
10%
90%
50%
10%
(1/6 of circuit shown)
ORDERING INFORMATION
Device Package Shipping
MC14069UBDG SOIC−14
(Pb−Free)
55 Units / Rail
NLV14069UBDG* SOIC−14
(Pb−Free)
55 Units / Rail
MC14069UBDR2G SOIC−14
(Pb−Free)
2500 Units / Tape & Reel
NLV14069UBDR2G* SOIC−14
(Pb−Free)
2500 Units / Tape & Reel
MC14069UBDTR2G TSSOP−14
(Pb−Free)
2500 Units / Tape & Reel
NLV14069UBDTR2G* TSSOP−14
(Pb−Free)
2500 Units / Tape & Reel
MC14069UBFELG SOEIAJ−14
(Pb−Free)
2000 Units / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
MC14069UB
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (Voltages Referenced to V
SS
)
Characteristic
Symbo
l
V
DD
Vdc
−55_C 25_C 125_C
Unit
Min Max Min
Typ
(Note 2)
Max Min Max
Output Voltage “0” Leve
l
V
in
= V
DD
V
in
= 0 “1” Leve
l
V
OL
5.0
10
15
0.05
0.05
0.05
0
0
0
0.05
0.05
0.05
0.05
0.05
0.05
Vdc
V
OH
5.0
10
15
4.95
9.95
14.95
4.95
9.95
14.95
5.0
10
15
4.95
9.95
14.95
Vdc
Input Voltage “0” Leve
l
(V
O
= 4.5 Vdc)
(V
O
= 9.0 Vdc)
(V
O
= 13.5 Vdc)
“1” Leve
l
(V
O
= 0.5 Vdc)
(V
O
= 1.0 Vdc)
(V
O
= 1.5 Vdc)
V
IL
5.0
10
15
1.0
2.0
2.5
2.25
4.50
6.75
1.0
2.0
2.5
1.0
2.0
2.5
Vdc
V
IH
5.0
10
15
4.0
8.0
12.5
4.0
8.0
12.5
2.75
5.50
8.25
4.0
8.0
12.5
Vdc
Output Drive Current
(V
OH
= 2.5 Vdc) Source
(V
OH
= 4.6 Vdc)
(V
OH
= 9.5 Vdc)
(V
OH
= 13.5 Vdc)
(V
OL
= 0.4 Vdc) Sin
k
(V
OL
= 0.5 Vdc)
(V
OL
= 1.5 Vdc)
I
OH
5.0
5.0
10
15
–3.0
–0.64
–1.6
–4.2
–2.4
–0.51
–1.3
–3.4
–4.2
–0.88
–2.25
–8.8
–1.7
–0.36
–0.9
–2.4
mAdc
I
OL
5.0
10
15
0.64
1.6
4.2
0.51
1.3
3.4
0.88
2.25
8.8
0.36
0.9
2.4
mAdc
Input Current I
in
15 ±0.1 ±0.00001 ±0.1 ±1.0
mAdc
Input Capacitance
(V
in
= 0)
C
in
5.0 7.5 pF
Quiescent Current
(Per Package)
I
DD
5.0
10
15
0.25
0.5
1.0
0.0005
0.0010
0.0015
0.25
0.5
1.0
7.5
15
30
mAdc
Total Supply Current (Notes 3 and 4)
(Dynamic plus Quiescent,
Per Gate) (C
L
= 50 pF)
I
T
5.0
10
15
I
T
= (0.3 mA/kHz) f + I
DD
/6
I
T
= (0.6 mA/kHz) f + I
DD
/6
I
T
= (0.9 mA/kHz) f + I
DD
/6
mAdc
Output Rise and Fall Times (Note 3)
(C
L
= 50 pF)
t
TLH
, t
THL
= (1.35 ns/pF) C
L
+ 33 ns
t
TLH
, t
THL
= (0.60 ns/pF) C
L
+ 20 ns
t
TLH
, t
THL
= (0.40 ns/pF) C
L
+ 20 ns
t
TLH
,
t
THL
5.0
10
15
100
50
40
200
100
80
ns
Propagation Delay Times (Note 3)
(C
L
= 50 pF)
t
PLH
, t
PHL
= (0.90 ns/pF) C
L
+ 20 ns
t
PLH
, t
PHL
= (0.36 ns/pF) C
L
+ 22 ns
t
PLH
, t
PHL
= (0.26 ns/pF) C
L
+ 17 ns
t
PLH
,
t
PHL
5.0
10
15
65
40
30
125
75
55
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.
3. The formulas given are for the typical characteristics only at 25_C.
4. To calculate total supply current at loads other than 50 pF:
I
T
(C
L
) = I
T
(50 pF) + (C
L
– 50) Vfk
where: I
T
is in mA (per package), C
L
in pF, V = (V
DD
– V
SS
) in volts, f in kHz is input frequency, and k = 0.002.

MC14069UBCPG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Inverters 3-18V CMOS Hex
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union