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NSR01L30NXT5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 2
1 Publication Order Number:
NSR01L30/D
NSR01L30NXT5G
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current. The DSN2 (Dual Silicon
No−lead) package is a chip level package using solderable metal
contacts under the package similar to DFN style packages. The DSN
style package enables 100% utilization of the package area for active
silicon, offering a significant performance per board area advantage
compared to products in plastic molded packages. The low thermal
resistance enables designers to meet the challenging task of achieving
higher efficiency and meeting reduced space requirements.
Features
• Very Low Forward Voltage Drop − 400 mV @ 10 mA
• Low Reverse Current − 0.2 mA @ 10 V VR
• 100 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• Power Dissipation of 312 mW with Minimum Trace
• Very High Switching Speed
• Low Capacitance − CT = 7 pF
• This is a Halide−Free Device
• This is a Pb−Free Device
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Current (DC) I
F
100 mA
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
4.0
A
ESD Rating: Human Body Model
Machine Model
ESD >8.0
>400
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
http://onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR01L30NXT5G DSN2
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
DSN2
(0201)
CASE 152AA
MARKING
DIAGRAM
PIN 1
I130 = Specific Device Code
YYY = Year Code
I130
YYY
NSR01L30NXT5G
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
400
312
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
170
735
°C/W
mW
Storage Temperature Range T
stg
−40 to +125 °C
Junction Temperature T
J
+150 °C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 30 V)
I
R
0.2
3.0
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
V
F
0.40
0.53
V
Total Capacitance
(V
R
= 5.0 V, f = 1 MHz)
CT
7.0 pF
NSR01L30NXT5G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Forward Voltage Figure 2. Leakage Current
V
F
, FORWARD VOLTAGE (V) V
R
, REVERSE VOLTAGE (V)
0.60.50.40.30.10
0.001
0.01
0.1
1
10
100
302520151050
1.0E−05
1.0E−03
1.0E−01
1.0E+01
1.0E+03
Figure 3. Total Capacitance
V
R
, REVERSE VOLTAGE (V)
2520151050
0
2
4
6
8
10
12
14
I
F
, FORWARD CURRENT (mA)
I
r
, REVERSE CURRENT (mA)
C
T
, TOTAL CAPACITANCE (pF)
0.2
150°C
125°C
−25°C
75°C
25°C
150°C
125°C
−25°C
75°C
25°C
30
T
A
= 25°C
16
18
20
1.0E−04
1.0E−02
1.0E+00
1.0E+02
P1-P3P4-P4

NSR01L30NXT5G

Mfr. #:
Buy NSR01L30NXT5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 202 FC SCHOTTKY DIODES
Lifecycle:
New from this manufacturer.
Delivery:
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