© 2013 IXYS CORPORATION, All Rights Reserved
IXTA96P085T IXTP96P085T
IXTH96P085T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
20
24
28
32
36
40
44
-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 43V
T
J
= 25ºC
T
J
= 125ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
20
25
30
35
40
45
50
55
60
65
70
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 43V
I
D
= - 48A, - 24A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
19
20
21
22
23
24
25
26
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
35
40
45
50
55
60
65
70
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 43V
I
D
= - 48A
I
D
= - 24A
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
16
20
24
28
32
36
40
44
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1Ω, V
GS
= -10V
V
DS
= - 43V
I
D
= - 48A
I
D
= - 24A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
02468101214161820
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
350
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= -10V
V
DS
= - 43V
I
D
= - 24A, - 48A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
42
46
50
54
58
62
66
-48-46-44-42-40-38-36-34-32-30-28-26-24
I
D
- Amperes
t
f
- Nanoseconds
19
20
21
22
23
24
25
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC
,
V
GS
= - 10V
V
DS
= - 43V
T
J
= 25ºC, 125ºC
