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NSVBC818-40LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2004
November, 2016 − Rev. 4
1 Publication Order Number:
BC818−40LT1/D
BC818-40L, NSVBC818-40L
General Purpose
Transistors
NPN Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
25 V
Collector−Base Voltage V
CBO
30 V
Emitter−Base Voltage V
EBO
5.0 V
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
COLLECTOR
3
1
BASE
2
EMITTER
SOT−23
CASE 318
STYLE 6
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
1
6G M G
G
BC818−40LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
6G = Specific Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MARKING DIAGRAMS
NSVBC818−40LT1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
www.onsemi.com
BC818−40L, NSVBC818−40L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= −10 mA)
V
(BR)CEO
25 − − V
Collector−Emitter Breakdown Voltage
(V
EB
= 0, I
C
= −10 mA)
V
(BR)CES
30 − − V
Emitter−Base Breakdown Voltage
(I
E
= −1.0 mA)
V
(BR)EBO
5.0 − − V
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
I
CBO
−
−
−
−
100
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V)
(I
C
= 500 mA, V
CE
= 1.0 V)
h
FE
250
40
−
−
600
−
−
Collector−Emitter Saturation Voltage
(I
C
= 500 mA, I
B
= 50 mA)
V
CE(sat)
− − 0.7 V
Base−Emitter On Voltage
(I
C
= 500 mA, V
CE
= 1.0 V)
V
BE(on)
− − 1.2 V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
C
obo
− 10 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
h
FE
, DC CURRENT GAIN
1000
10
10000.1 10 100
100
1.0
V
CE
= 1 V
T
J
= 25°C
BC818−40L, NSVBC818−40L
www.onsemi.com
3
I
B
, BASE CURRENT (mA)
Figure 2. Saturation Region
I
C
, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
100
10
1
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Temperature Coefficients
+1
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Capacitances
0.1 11 10 100 1000
-2
-1
0
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
C, CAPACITANCE (pF)
1.0
0.8
0.6
0.4
0.2
0
0.01 0.1 10 1001
1.0
0.8
0.6
0.4
0.2
0
1 10 1000100
10 100
T
J
= 25°C
I
C
= 10 mA
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1 V
V
CE(sat)
@ I
C
/I
B
= 10
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib
100 mA 300 mA 500 mA
P1-P3P4-P4

NSVBC818-40LT1G

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Buy NSVBC818-40LT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 50V
Lifecycle:
New from this manufacturer.
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