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NVJD5121NT1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 9
1 Publication Order Number:
NTJD5121N/D
NTJD5121N, NVJD5121N
Power MOSFET
60 V, 295 mA, Dual N−Channel with ESD
Protection, SC−88
Features
• Low R
DS(on)
• Low Gate Threshold
• Low Input Capacitance
• ESD Protected Gate
• NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• This is a Pb−Free Device
Applications
• Low Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Stead
y
State
T
A
= 25°C
I
D
295
mA
T
A
= 85°C 212
t ≤ 5 s
T
A
= 25°C 304
T
A
= 85°C 219
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
250
mW
t ≤ 5 s 266
Pulsed Drain Current
t
p
= 10 ms
I
DM
900 mA
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
°C
Source Current (Body Diode) I
S
210 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Gate−Source ESD Rating (HBM) ESD
HBM
2000 V
Gate−Source ESD Rating (MM) ESD
MM
200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State
R
q
JA
467
°C/W
Junction−to−Ambient – t ≤ 5 s
R
q
JA
412
Junction−to−Lead – Steady State
R
q
JL
252
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
Top View
www.onsemi.com
SC−88 (SOT−363)
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
V
(BR)DSS
R
DS(on)
MAX I
D
Max
60 V
1.6 W @ 10 V
2.5 W @ 4.5 V
295 mA
D
2
www.onsemi.com
MARKING DIAGRAM &
PIN ASSIGNMENT
XX M G
G
1
6
1
XX = Device Code
M = Date Code
G = Pb−Free Package
D1 G2 S2
S1 G1 D2
(Note: Microdot may be in either location)
SC−88/SOT−363
CASE 419B
STYLE 26
See detailed ordering and shipping information ion page 5 o
f
this data sheet.
ORDERING INFORMATION
NTJD5121N, NVJD5121N
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 250 mA, ref to 25°C
92 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 500
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±10
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.0 1.7 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 500 mA 1.0 1.6 W
V
GS
= 4.5 V, I
D
= 200 mA 1.2 2.5
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 200 mA 80 S
Gate Resistance R
G
536
W
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 20 V
26
pF
Output Capacitance C
OSS
4.4
Reverse Transfer Capacitance C
RSS
2.5
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 25 V,
I
D
= 200 mA
0.9
nC
Threshold Gate Charge Q
G(TH)
0.2
Gate−to−Source Charge Q
GS
0.3
Gate−to−Drain Charge Q
GD
0.28
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DD
= 25 V,
I
D
= 200 mA, R
G
= 25 W
22
ns
Rise Time t
r
34
Turn−Off Delay Time t
d(off)
34
Fall Time t
f
32
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 200 mA
T
J
= 25°C 0.8 1.2
V
T
J
= 85°C 0.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTJD5121N, NVJD5121N
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
0
0.4
0.8
1.2
1.6
012345
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D,
DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
T
J
= 25°C
5 V
V
GS
= 10
4.5 V
4.2 V
4 V
3.8 V
3.6 V
3.4 V
3.2 V
3 V
2.4 V
2.8 V
2.6 V
2.2 V
0
0.2
0.4
0.6
0.8
1
1.2
012345
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D,
DRAIN CURRENT (A)
−55°C
25°C
V
DS
≥ 10 V
T
J
= 125°C
0
0.4
0.8
1.2
1.6
2
2.4
0 0.2 0.4 0.6 0.8 1
Figure 3. On−Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (A)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 125°C
V
GS
= 4.5 V
T
J
= 85°C
T
J
= 25°C
T
J
= −55°C
0
0.4
0.8
1.2
1.6
2
2.4
0 0.2 0.4 0.6 0.8 1
Figure 4. On−Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (A)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 125°C
V
GS
= 10 V
T
J
= −55°C
T
J
= 25°C
T
J
= 85°C
0.8
1.2
1.6
2
2.4
246810
Figure 5. On−Resistance versus
Gate−to−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D
= 500 mA
I
D
= 200 mA
0.6
0.8
1
1.2
1.4
1.6
1.8
−50 −25 0 25 50 75 100 125 150
Figure 6. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 0.2 A
V
GS
= 4.5 V and 10 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4.5 V
10 V
P1-P3P4-P6

NVJD5121NT1G

Mfr. #:
Buy NVJD5121NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 2N-CH 60V 0.295A SC88
Lifecycle:
New from this manufacturer.
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