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Sep 08, 2005 V.0
Mid-voltage
Surface-Mount Ceramic Multilayer Capacitors
14
16
NP0/X7R
100 V to 500 V
Product specification
TEST TEST METHOD PROCEDURE REQUIREMENTS
Mounting in accordance with IEC 60384-22 paragraph
4.3
No visible damage
Bond strength
of plating on
end face
IEC 60384-
21/22
4.8
Conditions: bending 1 mm at a rate of 1 mm/s, radius jig
340 mm
NP0: l∆C/Cl: ≤ 1% or 0.5 pF
whichever is greater
X7R: l∆C/Cl: ≤ 10%
Resistance to
soldering heat
4.9
Precondition: 150 +0/–10 °C for 1 hour, then keep for
24 ±1 hours at room temperature
Preheating: for size ≤ 1206: 120 to 150 °C for 1 minute
Preheating: for size >1206: 100 to 120 °C for 1 minute
and 170 to 200 °C for 1 minute
Solder bath temperature: 260 ±5 °C
Dipping time: 10 ±0.5 seconds
Recovery time: 24 ±2 hours.
The termination shall be well tinned
NP0: l∆C/Cl: ≤ 0.5% or 0.5 pF
whichever is greater
X7R: l∆C/Cl: ≤ 10%
D.F.: within initial specified value
R
ins
: within initial specified value
Solderabilit
4.10
Unmounted chips completely immersed in a solder bath
at 235 ±5 °C
Dipping time: 2 ±0.5 seconds
Depth of immersion: 10 mm
The termination shall be well
tinned.
Preconditioning;
150 +0/–10 °C for 1 hour, then keep for 24 ±1 hours a
room temperature
5 cycles with following detail:
30 minutes at lower category temperature;
30 minutes at upper category temperature
Rapid change
o
temperature
4.11
Recovery time 24 ±2 hours.
No visual damage
NP0: l∆C/Cl: ≤ 1% or 1 pF
whichever is greater
X7R: l∆C/Cl: ≤ 15%
D.F.: within initial specified value
R
ins
: within initial specified value
Damp heat,
with U
r
load
4.13
Initial measurements; after 150 +0/-10 °C for 1 hour,
then keep for 24 ±1 hours at room temperature
Duration and conditions: 500 ±12 hours at 40 ±2 °C;
90 to 95% RH; U
r
applied
Final measurement: perform a heat treatment at
150 +0/–10 °C for 1 hour, final measurements shall be
carried out 24 ±1 hours after recovery at room
temperature without load.
NP0: l∆C/Cl: ≤ 2% or 1 pF
whichever is greater
X7R: l∆C/Cl: ≤ 15%
NP0: D.F.: 2 × initial value max.
X7R ≥ 100 V: D.F. ≤ 5%
NP0: R
ins
≥ 2,500 MΩ or R
ins
× C
r
≥ 25 seconds, whichever is less
X7R: R
ins
≥ 500 MΩ or R
ins
× C
r
≥
25 seconds, whichever is less
Table 10 Test condition, procedure and requirements (continued)