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MIMD10A-7-F

P1-P3P4-P4
DS30381 Rev. 8 - 2
1 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
MIMD10AMIMD10A
DUAL PRE-BIASED TRANSISTORS FOR POWER MANAGEMENT
Features
NEW PPRODRODUCT T UC
• Epitaxial Planar Die Construction
• Built-In Biasing Resistors
• One 500mA PNP and One 100mA NPN
• Lead Free/RoHS Compliant (Note 1)
• "Green" Device (Note 3 and 4)
Mechanical Data
• Case: SOT-363
• Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020A
• Terminals: Finish - Solderable per MIL-STD-202,
Method 208
• Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
• Marking Code: C73 See Page 4
• Ordering & Date Code: See Page 4
• Terminal Connections: See Diagram
• Weight: 0.015 grams (approximate)
P/N R1 R2
MIMD10A Tr1
Tr2
0.1K
10K
10K
-
SOT-363
Dim Min Max
A 0.10 0.30
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
F 0.30 0.40
H 1.80 2.20
J
⎯
0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
α
0°
8°
All Dime sions in mmn
A
M
J
L
D
Maximum Ratings PNP Section Tr1 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage
V
CC
-50 V
Input Voltage
V
IN
-5 to +5 V
Output Current
I
O
-500 mA
Maximum Ratings NPN Section Tr2 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
100 mA
Maximum Ratings - Total @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 2)
P
d
200 mW
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150 °C
Notes: 1. No purposefully added lead.
2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
SCHEMATIC DIAGRAM
R
1
R
1
R
2
T
r2
T
r1
B
C
H
K
E
1
C
2
B
1
C
1
E
2
B
2
F
DS30381 Rev. 8 - 2
2 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics PNP Section Tr1 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
-0.3
⎯ ⎯ V
CC
= -5V, I
O
= -100μA
Input Voltage
V
l(on)
⎯ ⎯
-1.5
V
V
O
= 0.3, I
O
= -100mA
Output Voltage
V
O(on)
⎯
-0.1 -0.3 V
I
O
= -100mA/-5mA
Input Current
I
l
⎯ ⎯
-25 mA
V
I
= -2V
Output Current
I
O(off)
⎯ ⎯
-0.5
μA
V
CC
= -50V, V
I
= 0V
DC Current Gain
G
l
68
⎯ ⎯ ⎯
⎯
Gain-Bandwidth Product*
f
T
⎯
200
⎯
MHz
V
CE
= -10V, I
E
= -50mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics NPN Section Tr2 @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
⎯ ⎯
V
I
C
= 50μA
Collector-Emitter Breakdown Voltage
BV
CEO
50
⎯ ⎯
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
5
⎯ ⎯
V
I
E
= 50μA
Collector Cutoff Current
I
CBO
⎯ ⎯
0.5
μA
V
CB
= 50V
Emitter Cutoff Current
I
EBO
⎯ ⎯
0.5
μA
V
EB
= 4V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯ ⎯
0.3 V
I
C
/I
B
= 10mA / 1.0mA
DC Current Transfer Ratio
h
FE
100 250 600
⎯
I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product*
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
DS30381 Rev. 8 - 2
3 of 4
www.diodes.com
MIMD10A
© Diodes Incorporated
Typical Curves – Tr2
-50
050100
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Derating Curve
A
°
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(MILLIWA
T
T
S)
(TOTAL PACKAGE)
D
0.001
0.01
0.1
1
0
10
20
30
40
50
V, MAXIM
U
M
C
O
LLE
C
T
O
R
V
O
L
T
A
G
E (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 V vs. I
C
CE(SAT) C
I/I = 10
CB
-25 C
°
75 C
°
25 C
°
10
1,000
100
1
110
h, D
NEW PRODUCT
100
C
C
U
R
R
EN
T
G
AIN (N
O
R
MALIZED)
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
C
0
1
2
3
4
0
20
30
C
,
C
A
P
A
C
I
T
A
N
C
E (pF)
OB
V , REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
R
10
5
15
25
I = 0mA
E
0.01
0.1
1
10
100
0
1
234
89
10
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(mA)
C
V , INPUT VOLTAGE (V)
Fig. 5 Collector Current vs. Input Voltage
in
567
75°C
0.001
0.1
1
10
010203040
I , COLLECTOR CURRENT (mA)
Fig. 6 Input Voltage vs. Collector Current
C
50
V = 0.2
O
V , INPUT VOLTAGE (V)
in
P1-P3P4-P4

MIMD10A-7-F

Mfr. #:
Buy MIMD10A-7-F
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - Pre-Biased PREBIASED COMP.
Lifecycle:
New from this manufacturer.
Delivery:
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