2DB1132P-13

2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
4 of 6
www.diodes.com
December 2013
© Diodes Incorporated
2DB1132P/Q/R
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-40
— —
V
I
C
= -50µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-32
— —
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
— —
V
I
E
= -50µA
Collector Cut-off Current
I
CBO
— —
-0.5 µA
V
CB
=-20V
Emitter Cut-off Current
I
EBO
— —
-0.5 µA
V
EB
= -4V
Static Forward Current Transfer
Ratio (Note 10)
2DB1132P
h
FE
82
180
I
C
= -100mA, V
CE
= -3V
2DB1132Q 120 270
2DB1132R 180 390
Collector-Emitter saturation Voltage (Note 10)
V
CE
(
sat
)
-125 -500 mV
I
C
=-500mA, I
B
= -50mA
Transition frequency
f
T
190 — MHz
I
E
= 50mA, V
CE
= -5V,f=30MHz
Output Capacitance
C
ob
12 30 pF
I
E
= 0A, V
CB
= -10V,f=1MHz
Notes: 10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.001 0.01 0.1 1 10
100
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -3V
CE
200
300
400
500
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -3V
CE
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
5 of 6
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December 2013
© Diodes Incorporated
2DB1132P/Q/R
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
0
20
40
30
10
-I , EMITTER CURRENT
E
Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current
50
100
150
200
250
V = -5V
f = 30MHz
CE
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60
e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20
All Dimensions in mm
E
H
D1
B1
B
e
C
L
A
D
8° (4X)
H
R
0
.
2
0
0
2DB1132P/Q/R
Document number: DS31142 Rev: 6 - 2
6 of 6
www.diodes.com
December 2013
© Diodes Incorporated
2DB1132P/Q/R
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
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Copyright © 2013, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
Y1
X1
Y2
Y
C
X (3x)
Y3
Y4
X2 (2x)

2DB1132P-13

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 1000W -32Vceo
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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