PMK35EP,518 Datasheet PMK35EP,518 | P1-P3

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On 7 February 2017 the former NXP Standard Product business became a new company with the

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PMK35EP

P-channel TrenchMOS extremely low level FET

Rev. 02 — 29 April 2010 Product data sheet

1. Product profile

1.1 General description

Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a

plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

1.3 Applications

 Battery management  Load switching

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source

voltage

25 °C ≤ T

≤ 150 °C - - -30 V

drain current T

=25°C; V

= -10 V; see

Figure 1; see Figure 3

---14.

tot

total power

dissipation

=25°C; see Figure 2 --6.9W

Static characteristics

DSon

drain-source

on-state

resistance

=-10V; I

=-9.2A;

=25°C; see Figure 9

- 1619mΩ

Dynamic characteristics

gate-drain charge V

=-10V; I

=-9.2A;

=-15V; T

=25°C;

see Figure 11

; see Figure 12

-6-nC

Product data sheet Rev. 02 — 29 April 2010 2 of 12

NXP Semiconductors

PMK35EP

P-channel TrenchMOS extremely low level FET

2. Pinning information

3. Ordering information

4. Limiting values

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1Ssource

SOT96-1 (SO8)

2Ssource

3Ssource

4 G gate

5 D drain

6 D drain

7 D drain

8 D drain

001aaa025

Table 3. Ordering information

Type number Package

Name Description Version

PMK35EP SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage 25 °C ≤ T

≤ 150°C ---30V

DGR

drain-gate voltage 25 °C ≤ T

≤ 150 °C; R

=20kΩ ---30V

gate-source voltage -25 - 25 V

drain current T

=25°C; V

= -10 V; see Figure 1;

see Figure 3

---14.9A

= 100 °C; V

= -10 V; see Figure 1 ---7A

peak drain current T

=25°C; t

≤ 10 µs; pulsed;

see Figure 3

---28.8A

tot

total power dissipation T

=25°C; see Figure 2 --6.9W

stg

storage temperature -55 - 150 °C

junction temperature -55 - 150 °C

Source-drain diode

source current T

=25°C ---5.8A

peak source current T

=25°C; t

≤ 10 µs; pulsed - - -23 A

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

PMK35EP,518

Mfr. #:

Buy PMK35EP,518

Manufacturer:

Nexperia

Description:

IGBT Transistors MOSFET MOSFET P-CH FET 30V 14.9A

Lifecycle:

New from this manufacturer.

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PMK35EP,518