M27C801 Description
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Figure 3. PLCC connections
AI01814
A17
A8
A10
Q5
17
A1
A0
Q0
Q1
Q2
Q3
Q4
A7
A4
A3
A2
A6
A5
9
A18
A9
1
A16
A11
A13
A12
Q7
32
A19
V
CC
M27C801
A15
A14
Q6
GV
PP
E
25
V
SS
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Device description M27C801
8/24
2 Device description
The operating modes of the M27C801 are listed in the Operating Modes table. A single
power supply is required in Read mode. All inputs are TTL levels except for G
V
PP
and 12V
on A9 for Electronic Signature and Margin Mode Set or Reset.
2.1 Read mode
The M27C801 has two control functions, both of which must be logically active in order to
obtain data at the outputs. Chip Enable (E
) is the power control and should be used for
device selection. Output Enable (G
) is the output control and should be used to gate data to
the output pins, independent of device selection. Assuming that the addresses are stable,
the address access time (t
AVQV
) is equal to the delay from E to output (t
ELQV
). Data is
available at the output after a delay of t
GLQV
from the falling edge of G, assuming that E has
been low and the addresses have been stable for at least t
AVQV
-t
GLQV
.
2.2 Standby mode
The M27C801 has a standby mode which reduces the supply current from 35mA to 100µA.
The M27C801 is placed in the standby mode by applying a CMOS high signal to the E
input.
When in the standby mode, the outputs are in a high impedance state, independent of the
G
V
PP
input.
2.3 Two-line output control
Because EPROMs are usually used in larger memory arrays, the product features a 2 line
control function which accommodates the use of multiple memory connection. The two line
control function allows:
the lowest possible memory power dissipation,
complete assurance that output bus contention will not occur.
For the most efficient use of these two control lines, E
should be decoded and used as the
primary device selecting function, while G
should be made a common connection to all
devices in the array and connected to the READ
line from the system control bus. This
Table 2. Operating modes
(1)
1. X = V
IH
or V
IL
, V
ID
= 12 V ± 0.5 V.
Mode E GV
pp
A9 Q7-Q0
Read V
IL
V
IL
XData Out
Output Disable V
IL
V
IH
X Hi-Z
Program V
IL
Pulse V
PP
X Data In
Program Inhibit V
IH
V
PP
X Hi-Z
Standby V
IH
X X Hi-Z
Electronic signature V
IL
V
IL
V
ID
Codes
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M27C801 Device description
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ensures that all deselected memory devices are in their low power standby mode and that
the output pins are only active when data is required from a particular memory device.
2.4 System considerations
The power switching characteristics of Advanced CMOS EPROMs require careful
decoupling of the devices. The supply current, I
CC
, has three segments that are of interest to
the system designer: the standby current level, the active current level, and transient current
peaks that are produced by the falling and rising edges of E
. The magnitude of the transient
current peaks is dependent on the capacitive and inductive loading of the device at the
output. The associated transient voltage peaks can be suppressed by complying with the
two line output control and by properly selected decoupling capacitors. It is recommended
that a 0.1µF ceramic capacitor be used on every device between V
CC
and V
SS
. This should
be a high frequency capacitor of low inherent inductance and should be placed as close to
the device as possible. In addition, a 4.7µF bulk electrolytic capacitor should be used
between V
CC
and V
SS
for every eight devices. The bulk capacitor should be located near the
power supply connection point. The purpose of the bulk capacitor is to overcome the voltage
drop caused by the inductive effects of PCB traces.
2.5 Programming
When delivered (and after each erasure for UV EPROM), all bits of the M27C801 are in the
'1' state. Data is introduced by selectively programming '0's into the desired bit locations.
Although only '0' will be programmed, both '1's and '0's can be present in the data word. The
only way to change a '0' to a '1' is by die exposure to ultraviolet light (UV EPROM). The
M27C801 is in the programming mode when V
PP
input is at 12.75V and E is pulsed to V
IL
.
The data to be programmed is applied to 8 bits in parallel to the data output pins. The levels
required for the address and data inputs are TTL. V
CC
is specified to be 6.25V ± 0.25V.
2.6 Presto IIB programming algorithm
Presto IIB Programming Algorithm allows the whole array to be programmed with a
guaranteed margin, in a typical time of 52.5 seconds. This can be achieved with
STMicroelectronics M27C801 due to several design innovations to improve programming
efficiency and to provide adequate margin for reliability. Before starting the programming the
internal Margin Mode circuit is set in order to guarantee that each cell is programmed with
enough margin. Then a sequence of 50 µs program pulses are applied to each byte until a
correct Verify occurs (see Figure 4). No overprogram pulses are applied since the Verify in
Margin Mode provides the necessary margin.
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M27C801-120B1

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
EPROM 8M (1Mx8) 120ns
Lifecycle:
New from this manufacturer.
Delivery:
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