NL3HS644
www.onsemi.com
4
DC ELECTRICAL CHARACTERISTICS
Voltages referenced to GND. All typical values are at T
A
= 25°C unless otherwise specified.
T
A
= −40°C to +85°C
Symbol UnitMaxTypMinV
CC
(V)ConditionParameter
SWITCHES
DR
ON_
MIPI_LP
ON Resistance Matching I
ON
= −10 mA, OE = 1.8 0.17 W
Between LP MIPI 0 V, SEL = V
CC
or 0 V, 2.5 0.12
Channels (Note 3) CLKA, CLKB, DBn or 3.6 0.17
DAn = 0, 0.6, 1.2 V 4.5 0.09
R
ON_FLAT_
MIPI_HS
ON Resistance Flatness I
ON
= −10 mA, OE = 1.8 0.23 W
for HS MIPI Channels 0 V, SEL = V
CC
or 0 V, 2.5 0.11
(Note 3) CLKA, CLKB, DBn or 3.6 0.03
DAn = 0.1, 0.2, 0.3 V 4.5 0.02
R
ON_FLAT_
MIPI_LP
ON Resistance Flatness I
ON
= −10 mA, OE = 1.8 2.09 W
for LP MIPI Channels 0 V, SEL = V
CC
or 0 V, 2.5 1.19
(Note 3) CLKA, CLKB, DBn or 3.6 0.46
DAn = 0, 0.6, 1.2 V 4.5 0.08
I
NO(OFF)
,
I
NC(OFF)
OFF Leakage Current
(CLKAn, DAn, CLKBn, DBn)
CLKn, Dn = 0.3 V, V
CC
– 0.3 V,
CLKAn, DAn, or CLKBn; DBn =
V
CC
– 0.3 V, 0.3 V or Floating;
OE = 0 V
1.65 – 4.5 ±100 nA
I
A(ON)
ON Leakage Current of
Common Ports (CLKn, Dn)
CLKn, Dn = 0.3 V, V
CC
– 0.3 V,
CLKAn, DAn, or CLKBn; DBn =
V
CC
– 0.3 V, 0.3 V or Floating;
OE = 0 V
1.65 – 4.5 ±100 nA
V
IK
Clamp Diode Voltage I
IN
= −18 mA 2.8 −1.2 V
I
OZ
Off−State Leakage Current 0 v CLKn, Dn, CLKAn, CLKBn,
DAn, DBn v 3.6 V; OE
= High
4.5 ±100 nA
SUPPLY CURRENTS
I
CCZ
Quiescent Hi−Z Supply
Current
V
IN
= 0 or V
CC
, I
OUT
= 0 4.5 0.5
mA
I
CC
Quiescent Supply Current V
IN
= 0 or V
CC
, I
OUT
= 0 2.5 to 4.5 55 mA
1.8 30
I
CCT
Increase in I
CC
Current per V
SEL
, V(OE) = 1.65 V 4.5 4.0 mA
Control Voltage and V
CC
2.5 0.1 1.0
2. Measured by the voltage drop between A and B pins at the indicated current through the switch. ON resistance is determined by the lower
of the voltage on the two (A or B ports).
3. Guaranteed by characterization.
