RB520S30_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 6 October 2009 7 of 12
NXP Semiconductors
RB520S30
200 mA low V
F
MEGA Schottky barrier rectifier
8. Test information
FR4 PCB, mounting pad for cathode 1 cm
2
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
T
j
= 150 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig 9. Average forward current as a function of
ambient temperature; typical values
Fig 10. Average forward current as a function of
solder point temperature; typical values
T
amb
(°C)
0 50 100 150 1751257525
006aab708
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
T
sp
(°C)
0 50 100 150 1751257525
006aab709
0.1
0.2
0.3
I
F(AV)
(A)
0.0
(1)
(2)
(3)
(4)
(1) I
R
=1mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 11. Reverse recovery time test circuit and waveforms
t
rr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 Ω
I
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
