IXFK66N85X Datasheet IXFX66N85X, IXFK66N85X | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25C to 150C 850 V

V

DGR

T

J

= 25C to 150C, R

GS

= 1M 850 V

V

GSS

Continuous  30 V

V

GSM

Transient  40 V

I

D25

T

C

= 25C 66 A

I

DM

T

C

= 25C, Pulse Width Limited by T

JM

140 A

I

A

T

C

= 25C33A

E

AS

T

C

= 25C 2.5 J

P

D

T

C

= 25C 1250 W

dv/dt I

S

 I

DM

, V

DD

 V

DSS

, T

J

 150°C 50 V/ns

T

J

-55 ... +150 C

T

JM

150 C

T

stg

-55 ... +150 C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(T

J

= 25C Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 850 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 3.5 5.5 V

I

GSS

V

GS

=  30V, V

DS

= 0V 100 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 50 A

T

J

= 125C 3 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 65 m

IXFK66N85X

IXFX66N85X

V

DSS

= 850V

I

D25

= 66A

R

DS(on)





65m





DS100714A(12/16)

Features



International Standard Packages



Low Q

G



Avalanche Rated



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXFX)

Tab

G

D

S

TO-264 (IXFK)

S

G

D

Tab

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

X-Class HiPerFET

TM

Power MOSFET

Preliminary Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK66N85X

IXFX66N85X

Note 1. Pulse test, t  300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max

g

fs

V

DS

= 10V, I

D

= 0.5 • I

D25

, Note 1 25 42 S

R

Gi

Gate Input Resistance 0.75 

C

iss

8900 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 8900 pF

C

rss

142 pF

C

o(er)

294 pF

C

o(tr)

1270 pF

t

d(on)

40 ns

t

r

48 ns

t

d(off)

105 ns

t

f

20 ns

Q

g(on)

230 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

53 nC

Q

gd

113 nC

R

thJC

0.10C/W

R

thCS

0.15C/W

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1(External)

Effective Output Capacitance

Energy related

Time related

V

GS

= 0V

V

DS

= 0.8 • V

DSS

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 66 A

I

SM

Repetitive, Pulse Width Limited by T

JM

264 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.4 V

t

rr

250 ns

Q

RM

2.7  μC

I

RM

21.7 A

I

F

= 33A, -di/dt = 100A/s

V

R

= 100V, V

GS

= 0V

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are

derived from a subjective evaluation of the design, based upon prior knowledge and experi-

ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Terminals: 1 - Gate

2,4 - Drain

3 - Source

PLUS 247

TM

Outline

TO-264 Outline

Terminals: 1 = Gate

2,4 = Drain

3 = Source

b

Q

D

R

E

A

S

R1

x2

b2

b1

A1

L1

31 2

L

c

e

4

0P

e

Q1

1 2 3

4

b

C

L

D

R

Q

E

A

A1

L1

D2

D1

E1

A2

b2 2 PLCS

3 PLCS

2 PLCS

b4

BACK SIDE

IXFK66N85X

IXFX66N85X

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

00.511.522.533.544.5

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

9V

6V

8V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

10

20

30

40

50

60

70

012345678910

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

8V

Fig. 4. R

DS(on)

Normalized to I

D

= 33A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 33A

I

D

= 66A

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

8V

9V

Fig. 5. R

DS(on)

Normalized to I

D

= 33A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 20 40 60 80 100 120 140 160 180

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Normalized Breakdown & Threshold Voltages

vs. Junction Temperature

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

- Degrees Centigrade

BV

DSS

/ V

GS(th)

- Normalized

BV

DSS

V

GS(th)

IXFK66N85X

IXFK66N85X

Products related to this Datasheet