FDS4072N3 Rev B2 (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
E
AS
Drain-Source Avalanche Energy Single Pulse, V
DD
= 20V, I
D
=12.4 A 200 mJ
I
AS
Drain-Source Avalanche Current 12.4 A
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 µA
40 V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 µA, Referenced to 25°C
38
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 32 V, V
GS
= 0 V 1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 12 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –12 V , V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
1 1.3 3 V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= 250 µA, Referenced to 25°C
–4.5
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 4.5 V, I
D
= 12.4 A
V
GS
= 10 V, I
D
= 13.7 A
V
GS
= 4.5 V, I
D
= 12.4 A,T
J
= 125°C
9.7
8.5
14.7
12
10
20
mΩ
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 12.4 A 84 S
Dynamic Characteristics
C
iss
Input Capacitance 4299 pF
C
oss
Output Capacitance 351 pF
C
rss
Reverse Transfer Capacitance
V
DS
= 20 V, V
GS
= 0 V,
f = 1.0 MHz
149 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 20 36 ns
t
r
Turn–On Rise Time 12 22 ns
t
d(off)
Turn–Off Delay Time 52 83 ns
t
f
Turn–Off Fall Time
V
DD
= 20 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6 Ω
18 32 ns
Q
g
Total Gate Charge 33 46 nC
Q
gs
Gate–Source Charge 7.8 nC
Q
gd
Gate–Drain Charge
V
DS
= 20 V, I
D
= 12.4 A,
V
GS
= 4.5 V
8.1 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current 2.5 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 2.5 A (Note 2) 0.7 1.2 V
t
rr
Diode Reverse Recovery Time 30 nS
Q
rr
Diode Reverse Recovery Charge
I
F
= 12.4 A,
d
iF
/d
t
= 100 A/µs
90 nC
FDS4072N3
