NTMFS4923NE
http://onsemi.com
5
TYPICAL CHARACTERISTICS
QT
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
25201510 3050
0
500
1000
1500
4500
45353025201050
0
1
2
4
7
8
9
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.7 1.00.60.50.4
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) T
J
, STARTING JUNCTION TEMPERATURE (°C)
1001010.01
0.01
1
10
100
1000
150125100755025
0
10
40
60
80
110
130
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
15 40 50
3
6
11
T
J
= 25°C
Qgs
Qgd
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
0 ≤ V
GS
≤ 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
I
D
= 29 A
2000
2500
3000
3500
4000
20
30
50
70
90
100
120
5
10
10 ms
0.1
0.1
