© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 1
1 Publication Order Number:
NTMFS4923NE/D
NTMFS4923NE
Power MOSFET
30 V, 91 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Dual Sided Cooling Capability
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
Applications
• CPU Power Delivery, DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
21.4
A
T
A
= 100°C 13.5
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.63 W
Continuous Drain
Current R
q
JA
≤
10 s (Note 1)
T
A
= 25°C
I
D
38.8
A
T
A
= 100°C 24.5
Power Dissipation
R
q
JA
≤ 10 s
(Note 1)
T
A
= 25°C P
D
8.7 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
12.7
A
T
A
= 100°C 8.0
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.93 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
91
A
T
C
= 85°C 66
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
48 W
Pulsed Drain
Current
T
A
= 25°C, t
p
= 10 ms
I
DM
275 A
Current Limited by Package T
A
= 25°C I
Dmax
100 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−40 to
+150
°C
Source Current (Body Diode) I
S
44 A
Drain to Source DV/DT dV/d
t
6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 47 A
pk
, L = 0.1 mH, R
G
= 25 W
E
AS
110 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4923NE
AYWZZ
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
3.3 mW @ 10 V
91 A
4.8 mW @ 4.5 V
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4923NET1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4923NET3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
1
75 A
