NVTFS4C05NWFTAG

NVTFS4C05N
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) Q
g
, TOTAL GATE CHARGE (nC)
25201510 3050
0
250
1000
1250
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.50.4
0
2
4
6
8
10
12
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
1
10
100
1000
C, CAPACITANCE (pF)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 0 V
T
J
= 25°C
C
iss
C
oss
C
rss
Q
T
Q
gs
Q
gd
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
V
GS
= 10 V
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1 ms
10 ms
1 ms
dc
1750
2500
500
750
1500
2000
2250
3000
2750
1.0
0
2
4
6
8
10
0 4 8 121620242832
T
J
= 25°C
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
14
16
18
20
0.01 ms
0.1
NVTFS4C05N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 12. Thermal Response
t, PULSE TIME (s)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
TRANSIENT THERMAL RESISTANCE (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
R
q
JA
Single Pulse
Figure 13. G
FS
vs. I
D
I
D
(A)
4030100
0
20
100
G
FS
(S)
20 50
40
60 80
60
80
120
70
Figure 14. Avalanche Characteristics
T
AV
, TIME IN AVALANCHE (s)
0.0010.0001
1
10
1000
I
PEAK
, DRAIN CURRENT (A)
0.00001
T
J(initial)
= 85°C
R
y
JC
Single Pulse
y
JC
, Infinite Heat Sink Assumption
q
JA
, 650 mm
2
, 2 oz Cu Pad, Single
Layer on FR4
100
0.000001
T
J(initial)
= 25°C
ORDERING INFORMATION
Device Package Shipping
NVTFS4C05NTAG WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFS4C05NWFTAG WDFN8
(Pb−Free)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVTFS4C05N
http://onsemi.com
6
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
M 1.40 1.50
q 0 −−−
_
1.60
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994
.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
q
D
E
B
A
0.20
C
0.20 C
2X
2X
DIM MIN NOM
MILLIMETERS
A 0.70 0.75
A1 0.00 −−
b 0.23 0.30
c 0.15 0.20
D
D1 2.95 3.05
D2 1.98 2.11
E
E1 2.95 3.05
E2 1.47 1.60
e 0.65 BSC
G 0.30 0.41
K 0.65 0.80
L 0.30 0.43
L1 0.06 0.13
A
0.10 C
0.10 C
DETAIL A
14
8
L1
e/2
8X
D2
G
E2
K
b
A0.10 BC
0.05
C
L
DETAIL A
A1
e
6X
c
4X
C
SEATING
PLANE
5
MAX
0.80
0.05
0.40
0.25
3.15
2.24
3.15
1.73
0.51
0.95
0.56
0.20
M
*For additional information on our Pb−Free strategy and solderin
g
details, please download the ON Semiconductor Soldering an
d
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.650.42
0.75
2.30
3.46
PACKAGE
8X
0.055 0.059
0 −−−
_
0.063
12
_
0.028 0.030
0.000 −−
0.009 0.012
0.006 0.008
0.116 0.120
0.078 0.083
0.116 0.120
0.058 0.063
0.026 BSC
0.012 0.016
0.026 0.032
0.012 0.017
0.002 0.005
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.020
0.037
0.022
0.008
MIN NOM
INCHES
MAX
78
PITCH
3.60
0.57
0.47
OUTLINE
DIMENSION: MILLIMETERS
3.30 BSC
3.30 BSC
0.130 BSC
0.130 BSC
2.37
0.66
4X
E3 0.23 0.30 0.40
0.009 0.012 0.016
E3
4X
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NVTFS4C05N/D
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NVTFS4C05NWFTAG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET U8FL 30V 102 A 3.6MOH
Lifecycle:
New from this manufacturer.
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