IRF7401PbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient 0.044 V/°C Reference to 25°C, I
D
= 1mA
0.022 V
GS
= 4.5V, I
D
= 4.1A
0.030 V
GS
= 2.7V, I
D
= 3.5A
V
GS(th)
Gate Threshold Voltage 0.70 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 11 S V
DS
= 15V, I
D
= 4.1A
1.0 V
DS
= 16V, V
GS
= 0V
25 V
DS
= 16V, V
GS
= 0V, T
J
= 125 °C
Gate-to-Source Forward Leakage 100 V
GS
= 12V
Gate-to-Source Reverse Leakage -100 V
GS
= -12V
Q
g
Total Gate Charge 48 I
D
= 4.1A
Q
gs
Gate-to-Source Charge 5.1 nC V
DS
= 16V
Q
gd
Gate-to-Drain ("Miller") Charge 20 V
GS
= 4.5V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time 13 V
DD
= 10V
t
r
Rise Time 72 I
D
= 4.1A
t
d(off)
Turn-Off Delay Time 65 R
G
= 6.0Ω
t
f
Fall Time 92 R
D
= 2.4Ω, See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance 1600 V
GS
= 0V
C
oss
Output Capacitance 690 pF V
DS
= 15V
C
rss
Reverse Transfer Capacitance 310 = 1.0MHz, See Fig. 5
Notes:
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage 1.0 V T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time 39 59 ns T
J
= 25°C, I
F
= 4.1A
Q
rr
Reverse RecoveryCharge 42 63 nC di/dt = 100A/µs
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 4.1A, di/dt ≤ 100A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
35
3.1
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance 4.0
L
D
Internal Drain Inductance 2.5
nH
ns
nA
µA
Ω
R
DS(ON)
Static Drain-to-Source On-Resistance
G
Surface mounted on FR-4 board, t ≤ 10sec.