OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTLUS3A39PZTAG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
March, 2016 − Rev. 2
1 Publication Order Number:
NTLUS3A39PZ/D
NTLUS3A39PZ
Power MOSFET
−20 V, −5.2 A, Single P−Channel, ESD,
1.6x1.6x0.55 mm UDFN Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
• Ultra Low R
DS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Optimized for Power Management Applications for Portable
Products, Such as Cell Phones, PMP, Media Tablets, DSC, GPS, and
Others
• Battery Switch
• High Side Load Switch
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain-to-Source Voltage V
DSS
−20 V
Gate-to-Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
−5.2
A
T
A
= 85°C −3.7
t ≤ 5 s T
A
= 25°C −6.4
Power Dissipa-
tion (Note 1)
Steady
State
T
A
= 25°C
P
D
1.5
W
t ≤ 5 s T
A
= 25°C 2.3
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
−3.4
A
T
A
= 85°C −2.4
Power Dissipation (Note 2) T
A
= 25°C P
D
0.6 W
Pulsed Drain Current
tp = 10 ms
I
DM
−17 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
−1 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
www.onsemi.com
P−Channel MOSFET
−20 V
50 mW @ −2.5 V
39 mW @ −4.5 V
R
DS(on)
MAX I
D
MAXV
(BR)DSS
MOSFET
UDFN6
CASE 517AU
See detailed ordering and shipping information on page 5 of
this data sheet.
ORDERING INFORMATION
AE = Specific Device Code
M = Date Code
G = Pb−Free Package
81 mW @ −1.8 V
MARKING DIAGRAM
147 mW @ −1.5 V
(Top View)
(Note: Microdot may be in either location)
−5.2 A
S
D
G
1
6
AE MG
G
1
PIN CONNECTIONS
NTLUS3A39PZ
www.onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 3)
R
θJA
85
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
θJA
55
Junction-to-Ambient – Steady State min Pad (Note 4)
R
θJA
200
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm
2
, 2 oz. Cu.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−20 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= −250 mA, ref to 25°C
13 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −20 V
T
J
= 25°C −1.0
mA
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V ±10
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.4 −1.0 V
Negative Threshold Temp. Coefficient V
GS(TH)
/T
J
3.0 mV/°C
Drain-to-Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −4.0 A 30 39
mW
V
GS
= −2.5 V, I
D
= −2.0 A 40 50
V
GS
= −1.8 V, I
D
= −1.2 A 55 81
V
GS
= −1.5 V, I
D
= −0.5 A 75 147
Forward Transconductance g
FS
V
DS
= −5 V, I
D
= −3.0 A 25 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz,
V
DS
= −15 V
920
pF
Output Capacitance C
OSS
85
Reverse Transfer Capacitance C
RSS
80
Total Gate Charge Q
G(TOT)
V
GS
= −4.5 V, V
DS
= −15 V;
I
D
= −3.0 A
10.4
nC
Threshold Gate Charge Q
G(TH)
0.5
Gate-to-Source Charge Q
GS
1.2
Gate-to-Drain Charge Q
GD
3.0
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t
d(ON)
V
GS
= −4.5 V, V
DD
= −15 V,
I
D
= −3.0 A, R
G
= 1 W
7.2
ns
Rise Time t
r
12.2
Turn-Off Delay Time t
d(OFF)
34.7
Fall Time t
f
34.8
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −1.0 A
T
J
= 25°C 0.67 1.0
V
T
J
= 125°C 0.56
Reverse Recovery Time t
RR
V
GS
= 0 V, dis/dt = 100 A/ms,
I
S
= −1.0 A
11.1
ns
Charge Time t
a
5.8
Discharge Time t
b
5.3
Reverse Recovery Charge Q
RR
4 nC
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLUS3A39PZ
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) −V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−V
GS
, GATE VOLTAGE (V) −I
D
, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) −V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
−I
D
, DRAIN CURRENT (A)
−I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE (W)
−I
DSS
, LEAKAGE (nA)
V
GS
= −2.5 V
−3.0 V
−4.5 to −3.5 V
−1.5 V
V
DS
≤ −10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
I
D
= −4.0 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 25°C
−1.8 V
−2.5 V
V
GS
= −4.5 V
V
GS
= −4.5 V
I
D
= −4.0 A
T
J
= 85°C
T
J
= 125°C
100
1000
10000
100000
2 4 6 8 10 12 14 16 18 20
0
2
4
6
8
10
12
14
16
18
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
−1.8 V
−2 V
0
2
4
6
8
10
12
14
16
18
20
0.5 1 1.5 2 2.
5
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0.11
0.12
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
0.020
0.040
0.060
0.080
0.100
0.120
1 3 5 7 9 11 13 15 17 19
−1.5 V
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
50 25 0 25 50 75 100 125 150
P1-P3P4-P6

NTLUS3A39PZTAG

Mfr. #:
Buy NTLUS3A39PZTAG
Manufacturer:
ON Semiconductor
Description:
MOSFET T4S PCH 20/8V IN 1.6X1.6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet