NTLUS3A39PZTBG

NTLUS3A39PZ
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
DS
, DRAINTOSOURCE VOLTAGE (V) Q
G
, TOTAL GATE CHARGE (nC)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE (W)
V
SD
, SOURCETODRAIN VOLTAGE (V)
Figure 11. Threshold Voltage
T
J
, JUNCTION TEMPERATURE (°C)
C, CAPACITANCE (pF)
V
GS
, GATETOSOURCE VOLTAGE (V)
t, TIME (ns)
I
S
, SOURCE CURRENT (A)
V
GS(th)
(V)
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
= 15 V
I
D
= 3.0 A
T
J
= 25°C
V
DS
V
GS
Q
GS
Q
GD
V
DS
, DRAINTOSOURCE VOLTAGE (V)
V
GS
= 4.5 V
V
DD
= 15 V
I
D
= 3.0 A
t
d(off)
t
d(on)
t
f
t
r
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
I
D
= 250 mA
1.0
10.0
100.0
1000.0
1 10 100
0.1
1.0
10.0
50 25 0 25 50 75 100 125 150
0
200
400
600
800
1000
1200
1400
1600
1800
0 2 4 6 8 10 12 14 16 18 20
0
3
6
9
12
15
18
0
1
2
3
4
5
024681012
Q
T
0.2 0.4 0.6 0.8 1.0 1.2
0.15
0.25
0.35
0.45
0.55
0.65
0.75
0.85
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
0.01
0.1
1
10
100
0.1 1 10 100
0 V
GS
8 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
10 ms
100 ms
1 ms
10 ms
dc
NTLUS3A39PZ
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5
TYPICAL CHARACTERISTICS
Figure 13. FET Thermal Response
t, TIME (s)
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
(°C/W)
R
q
JA
= 85°C/W
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
1E+00 1E+01 1E+02 1E+031E06 1E05 1E04 1E03 1E02 1E01
0
10
20
30
40
50
60
70
80
90
DEVICE ORDERING INFORMATION
Device Package Shipping
NTLUS3A39PZTAG UDFN6
(PbFree)
3000 / Tape & Reel
NTLUS3A39PZTBG UDFN6
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTLUS3A39PZ
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6
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AU
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
B
E
D
D2
E2
BOTTOM VIEW
b
e
6X
0.10 B
0.05
AC
C
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
NOTE 4
A
A1
(A3)
0.05 C
0.05 C
C
SEATING
PLANE
SIDE VIEW
L
6X
1
3
46
DIM MIN MAX
MILLIMETERS
A 0.45 0.55
A1 0.00 0.05
A3 0.13 REF
b 0.20 0.30
D 1.60 BSC
D2 0.15 0.25
E 1.60 BSC
E2 0.57 0.67
e 0.50 BSC
L 0.20 0.30
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
MOUNTING FOOTPRINT*
L1
DETAIL A
A1
A3
DETAIL B
OPTIONAL
MOLD CMPD
EXPOSED Cu
L
CONSTRUCTION
OPTIONAL
CONSTRUCTION
DETAIL B
DETAIL A
0.82
0.43
0.50 PITCH
0.35
2X
1.90
DIMENSIONS: MILLIMETERS
0.32
1
6X
SOLDERMASK DEFINED
L1 −−− 0.15
F 0.55 BSC
G 0.25 BSC
D1 0.62 0.72
D1
G
F
0.10 B
AC
0.10 BAC
0.16
0.28
0.68
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NTLUS3A39PZ/D
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NTLUS3A39PZTBG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET T4S PCH 20/8V IN 1.6X1.6
Lifecycle:
New from this manufacturer.
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