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BUK1M200-50SDLD,51

P1-P3P4-P6P7-P9P10-P12P13-P14
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 4 of 14
9397 750 10956
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4. Limiting values
[1] Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
[2] For all devices active.
[3] Not in an overload condition with drain current limiting.
[4] At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
[5] Single active device.
[6] With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current limiting and by activating the overtemperature protection.
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage
[1]
-50V
I
I
input current clamping - 3 mA
P
tot
total power dissipation T
sp
≤ 25 °C; Figure 4
[2]
- 9.4 W
I
IMS
non-repetitive peak input current t
p
≤ 1 ms - 10 mA
T
stg
storage temperature −55 +150 °C
T
j
junction temperature normal operation
[3]
- 150 °C
Overvoltage clamping
[4]
E
DS(CL)S
non-repetitive drain-source
clamping energy
T
amb
=25°C; I
DM
≤ I
D(lim)
(refer to Table 5);
inductive load
[5]
- 100 mJ
E
DS(CL)R
repetitive drain-source clamping
energy
T
sp
≤ 125 °C; I
DM
= 50 mA; f = 250 Hz
[5]
-5mJ
Overload protection
[6]
V
DS(prot)
protected drain-source voltage V
IS
≥ 4V - 35 V
Reverse diode
I
S
source (diode forward) current T
sp
≤ 25 °C; V
IS
=0V - 2 A
Electrostatic discharge
V
esd
electrostatic discharge voltage C = 250 pF; R = 1.5 kΩ -2kV
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 5 of 14
9397 750 10956
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5. Thermal characteristics
Fig 4. Normalized total power dissipation as a function of solder point temperature.
03aa17
0
40
80
120
0 50 100 150 200
(%)
T
sp
(°C)
P
der
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%×=
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-sp)
thermal resistance from junction to
solder point.
mounted on thermo clad board
one device active - - 45 K/W
all devices active - - 13.3 K/W
Philips Semiconductors
BUK1M200-50SDLD
Quad channel TOPFET™
Product data Rev. 01 — 02 April 2003 6 of 14
9397 750 10956
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
6. Static characteristics
[1] The supply for the logic and overload protection is taken from the input.
[2] The input voltage below which the overload protection circuits will be reset.
[3] Not directly measurable from the device terminals.
Table 5: Static characteristics
Limits are valid for
−
40
°
C
≤
T
sp
≤
+150
°
C and typical values for T
sp
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Off-state output characteristics
V
DS(CL)
drain-source clamping voltage V
IS
=0V; I
D
=10mA 50 - - V
V
IS
=0V; I
D
= 200 mA; t
p
≤ 300 µs;
δ≤0.01; Figure 16
50 62 70 V
I
DSS
drain-source leakage current V
IS
=0V; V
DS
=40V - - 100 µA
T
sp
=25°C; Figure 17 - 0.05 10 µA
On-state output characteristic
R
DSon
drain-source on-state resistance V
IS
≥ 4 V; t
p
≤ 300 µs; δ≤0.01;
I
D
= 100 mA; Figure 5 and 6
- - 380 mΩ
T
sp
=25°C - 150 200 mΩ
Input characteristics
[1]
V
IS(th)
input-source threshold voltage V
DS
=5V;I
D
= 1 mA 0.6 - 2.4 V
T
sp
=25C;Figure 10 1.1 1.6 2.1 V
I
IS
input-source current normal operation
V
IS
= 5 V 100 220 400 µA
V
IS
= 4 V 80 195 330 µA
protection latched
V
IS
= 5 V 200 400 650 µA
V
IS
=3V;Figure 11 and 12 130 250 430 µA
V
IS(rst)
input-source reset voltage t
rst
≥ 100 µs; Figure 15
[2]
1.5 2 2.9 V
t
rst(latch)
latch reset time
[6]
10 40 100 µs
V
IS(CL)
input-source clamping voltage I
I
= 1.5 mA; Figure 16 5.5 - 8.5 V
R
IG
input-gate resistance
[3]
-33-kΩ
Overload protection characteristic
[4]
I
D(lim)
drain current limiting V
IS
=5V;Figure 18 0.8 1.3 1.7 A
V
IS
= 4.5 V 0.7 - - A
4V≤ V
IS
≤ 5.5 V; 0.6 - 1.8 A
Short circuit load protection characteristics
P
OV(th)
overload power threshold V
IS
=5V
[5]
-17-W
T
d(sc)
short circuit response time V
IS
=5V;Figure 14
[7]
- 1.6 - ms
Overtemperature protection characteristic
T
j(th)
threshold junction temperature 4 V ≤ V
IS
≤ 5.5 V; I
D
≥ 280 mA or
V
DS
≥ 100 mV; Figure 9
150 165 - °C
Source-drain diode characteristic
V
SD
source-drain (diode forward)
voltage
I
S
= 2 A; V
IS
=0V; t
p
= 300 µs - 0.83 1.1 V
P1-P3P4-P6P7-P9P10-P12P13-P14

BUK1M200-50SDLD,51

Mfr. #:
Buy BUK1M200-50SDLD,51
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 50V 20SOIC
Lifecycle:
New from this manufacturer.
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