IPD50N04S4L08ATMA1

P1-P3 P4-P6 P7-P9

IPD50N04S4L-08

OptiMOS

®

-T2 Power-Transistor

Features

• N-channel - Enhancement mode

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

1)

I

D

T

C

=25°C, V

GS

=10V

50 A

T

C

=100°C, V

GS

=10V

2)

49

Pulsed drain current

2)

I

D,pulse

T

C

=25°C

200

Avalanche energy, single pulse

2)

E

AS

I

D

=25A

55 mJ

Avalanche current, single pulse

I

AS

-

50 A

Gate source voltage

V

GS

- +20/-16 V

Power dissipation

P

tot

T

C

=25°C

46 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

IEC climatic category; DIN IEC 68-1 - - 55/175/56

Value

V

DS

40 V

R

DS(on),max

7.3

mΩ

I

D

50 A

Product Summary

PG-TO252-3-313

Type Package Marking

IPD50N04S4-08 PG-TO252-3-313 4N04L08

Rev. 1.0 page 1 2010-04-06

IPD50N04S4L-08

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 3.3 K/W

Thermal resistance, junction -

ambient, leaded

R

thJA

---62

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

--40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0V, I

D

= 1mA

40 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=17µA

1.2 1.7 2.2

Zero gate voltage drain current

I

DSS

V

DS

=40V, V

GS

=0V,

T

j

=25°C

- 0.01 1 µA

V

DS

=18V, V

GS

=0V,

T

j

=85°C

2)

-120

Gate-source leakage current

I

GSS

V

GS

=20V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=4.5V, I

D

=25A

- 8.8 10.5

mΩ

V

GS

=10 V, I

D

=50 A

- 6.2 7.3

Values

Rev. 1.0 page 2 2010-04-06

IPD50N04S4L-08

Parameter Symbol Conditions Unit

min. typ. max.

D

y

namic characteristics

2)

Input capacitance

C

iss

- 1800 2340 pF

Output capacitance

C

oss

- 350 455

Reverse transfer capacitance

C

rss

-1535

Turn-on delay time

t

d(on)

-4-ns

Rise time

t

r

-8-

Turn-off delay time

t

d(off)

-11-

Fall time

t

f

-18-

Gate Char

g

e Characteristics

2)

Gate to source charge

Q

gs

- 5.8 7.5 nC

Gate to drain charge

Q

gd

- 2.6 6.0

Gate charge total

Q

g

-2330

Gate plateau voltage

V

plateau

- 3.2 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 50 A

Diode pulse current

2)

I

S,pulse

- - 200

Diode forward voltage

V

SD

V

GS

=0V, I

F

=50A,

T

j

=25°C

- 0.9 1.3 V

Reverse recovery time

2)

t

rr

V

R

=20V, I

F

=50A,

di

F

/dt =100A/µs

-34-ns

Reverse recovery charge

2)

Q

rr

-27-nC

2)

Defined by design. Not subject to production test.

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 3.3K/W the chip is able to carry 56A at 25°C. For detailed information

see Application Note ANPS071E

T

C

=25°C

Values

V

GS

=0 V, V

DS

=25 V,

f =1 MHz

V

DD

=20V, V

GS

=10V,

I

D

=50A, R

G

=3.5Ω

V

DD

=32V, I

D

=50A,

V

GS

=0 to 10V

Rev. 1.0 page 3 2010-04-06

P1-P3 P4-P6 P7-P9

IPD50N04S4L08ATMA1

Mfr. #:

Buy IPD50N04S4L08ATMA1

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2

Lifecycle:

New from this manufacturer.

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IPD50N04S4L08ATMA1