VBO36-14NO8

© IXYS All rights reserved
1 - 2
20100303a
VBO 36
IXYS reserves the right to change limits, test conditions and dimensions.
I
dAV
= 30 A
V
RRM
= 800-1800 V
Three Phase Rectifier Bridge
Features
• Package with ¼" fast-on terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
• Improved temperature & power cycling
Symbol Conditions Maximum Ratings
I
dAV
I
dAVM
T
C
= 85°C, module
T
C
= 62°C, module
25
30
A
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
550
600
A
A
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
500
550
A
A
I
2
t
T
VJ
= 45°C; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
1520
1520
A
2
s
A
2
s
T
VJ
= T
VJM
; t = 10 ms (50 Hz)
V
R
= 0 t = 8.3 ms (60 Hz)
1250
1250
A
2
s
A
2
s
T
VJ
T
VJM
T
stg
-40...+150
150
-40...+150
°C
°C
°C
V
ISOL
50/60 Hz, RMS t = 1 min
I
ISOL
< 1 mA t = 1 s
2500
3000
V~
V~
M
d
Mounting torque (M5)
(10-32 UNF)
2 ±10%
18 ±10%
Nm
lb.in.
Weight
Typ. 22 g
V
RSM
V
RRM
Type
V
DSM
V
DRM
V V
800 800 VBO 36-08NO8
1200 1200 VBO 36-12NO8
1400 1400 VBO 36-14NO8
1600 1600 VBO 36-16NO8
1800 1800 VBO 36-18NO8
Symbol Conditions Characteristic Values
I
R
V
R
= V
RRM
T
VJ
= 25°C
T
VJ
= T
VJM
0.3
2.0
mA
mA
V
F
I
F
= 150 A T
VJ
= 25°C 1.7 V
V
T0
r
t
For power-loss calculations only 0.8
5.8
V
mW
R
thJC
R
thJH
per diode; 120° el.
per module
per diode; 120° el.
per module
6.20
1.55
7.40
1.85
K/W
K/W
K/W
K/W
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
12.7
9.4
50
mm
mm
m/s
2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
+
~
~
-
+
-
~
~
Dimensions in mm (1 mm = 0.0394“)
6.3 x 0.8
A
B
D
E
© IXYS All rights reserved
2 - 2
20100303a
VBO 36
IXYS reserves the right to change limits, test conditions and dimensions.
V
F
[V]
I
F
[A]
0
50
100
150
200
0.5 1 1.5 2 2.5
150°C
25°C
I
F(OV)
/ I
FSM
10
0
10
1
10
2
10
3
t [ms]
0 V
RRM
½ V
RRM
1 V
RRM
I
FSM
[A]
T
VJ
= 45°C T
VJ
= 150°C
480 500
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.9
t [ms]
A
2
s
10
2
10
3
10
4
1 2 4 6 10
150°C
45°C
I
FAVM
[A] T
amb
[K]
P
tot
[W]
T
C
[°C]
0
20 0 50 100 150
70
60
50
40
30
20
10
150
135
120
105
90
75
65
50
10
DC
sin.
180°
rec. 120°
rec. 60°
rec. 30°
7.14
2.86
1.43
0.71
0.36
= R
thCA
[K/W]
T
C
[°C]
I
dAV
[A]
DC
sin.
180°
rec. 120°
rec. 60°
rec. 30°
10
20
30
40
50
0
50 100 150 200
t [s]
Z
th
[K/W]
0.01 0.1 1 10
2
4
6
8
Z
thJK
Z
thJC
0
100
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
I
FSM
: crest value, t: duration
Fig. 3 I
2
t versus time (1-10 ms)
per diode or thyristor
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Maximum forward current
at case temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated

VBO36-14NO8

Mfr. #:
Manufacturer:
Description:
BRIDGE RECT 3P 1.4KV 30A FO-B
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union