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BYW98-200RL

P1-P3P4-P5
1/5
BYW98-200
®
October 2001 - Ed: 4C
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
DO-201AD
BYW98-200
■
Very low conduction losses
■ Negligible switching losses
■
Low forward and reverse recovery times
FEATURES AND BENEFITS
Low voltage drop and rectifier suited for switching
mode base drive and transistor circuits.
DESCRIPTION
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
200 V
I
FRM
Repetitive peak forward current* tp = 5µs F = 1KHz
110 A
I
F (AV)
Average forward current Ta = 75°C δ = 0.5
3A
I
FSM
Surge non repetitive forward current tp = 10ms Sinusoidal
70 A
T
stg
Storage temperature range
-65to+150 °C
Tj
Maximum operating junction temperature
150 °C
T
L
Maximum lead temperature for soldering during 10s at 4mm from
case
230 °C
* On infinite heatsink with 10mm lead length.
ABSOLUTE RATINGS (limiting values)
I
F(AV)
3A
V
RRM
200 V
Tj (max) 150 °C
V
F
(max) 0.85 V
trr (max) 35 ns
MAIN PRODUCT CHARACTERISTICS
BYW98-200
2/5
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
*
Reverse leakage current T
j
= 25°C V
R
=V
RRM
10 µA
T
j
= 100°C
0.5 mA
V
F
**
Forward voltage drop T
j
= 25°C I
F
=9A
1.2 V
T
j
= 100°C I
F
=3A
0.78 0.85
Pulse test:*tp=5ms,δ<2%
** tp = 380 µs, δ <2%
To evaluate the maximum conduction losses use the following equations:
P=0.75xI
F(AV)
+ 0.04 I
F
2
(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol Test conditions Min. Typ. Max. Unit
trr
I
F
=1A dI
F
/dt = - 50A/µsV
R
= 30V T
j
= 25°C
35 ns
Qrr
I
F
=3A dI
F
/dt = - 20A/µsV
R
≤30V T
j
= 25°C
15 nC
tfr
I
F
=3A dI
F
/dt = - 50A/µs
Measured at 1.1 x V
F
max
T
j
= 25°C
20 ns
V
FP
I
F
=3A dI
F
/dt = - 50A/µsT
j
= 25°C
5V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-a)
Junction-ambient*
25 °C/W
* On infinite heatsink with 10mm lead length.
THERMAL PARAMETERS
BYW98-200
3/5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
PF(av)(W)
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
IF(av) (A)
T
δ
=tp/T
tp
Fig. 1: Average forward power dissipation versus
average forward current.
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
Rth(j-a)=75°C/W
Rth(j-a)=Rth(j-l)
Tamb(°C)
T
δ
=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
5 10152025
0
10
20
30
40
50
60
70
80
90
Rth(°C/W)
Rth(j-a)
Rth(j-l)
Lleads(mm)
Fig. 3: Thermal resistance versus lead length.
1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
Zth(j-a)/Rth(j-a)
tp(s)
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Fig. 4: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu) = 35µm).
1 10 100 200
10
20
50
100
C(pF)
F=1MHz
Tj=25°C
VR(V)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.10
1.00
10.00
70.00
IFM(A)
Tj=100°C
(Typical values)
Tj=25°C
Tj=100°C
VFM(V)
Fig. 5: Forward voltage drop versus forward
current (maximum values).
P1-P3P4-P5

BYW98-200RL

Mfr. #:
Buy BYW98-200RL
Manufacturer:
STMicroelectronics
Description:
Rectifiers 3.0 Amp 200 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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