SiRA64DP
www.vishay.com
Vishay Siliconix
S17-0335-Rev. A, 06-Mar-17
1
Document Number: 62987
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 30 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Gen IV power MOSFET
• Optimized Q
g
, Q
gd
, and Q
gd
/Q
gs
ratio
reduces switching related power loss
• 100 % R
g
and UIS tested
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• VRMs and embedded DC/DC
• Synchronous buck converter
• Load switching
Notes
a. Based on T
C
= 25 °C
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
f. Maximum under steady state conditions is 70 °C/W
g. Package limited
PRODUCT SUMMARY
V
DS
(V) 30
R
DS(on)
max. () at V
GS
= 10 V 0.00210
R
DS(on)
max. () at V
GS
= 4.5 V 0.00286
Q
g
typ. (nC) 19.7
I
D
(A)
a, g
60
a, g
Configuration Single
PowerPAK
®
SO-8 Single
Top View
1
6.15 mm
5.15 mm
Bottom View
4
G
3
S
2
S
1
S
D
8
D
6
D
7
D
5
N-Channel MOSFET
G
D
S
ORDERING INFORMATION
Package PowerPAK SO-8
Lead (Pb)-free and halogen-free SiRA64DP-T1-RE3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
30
V
Gate-source voltage V
GS
+20, -16
Continuous drain current (T
J
= 150 °C)
T
C
= 25 °C
I
D
60
g
A
T
C
= 70 °C 60
g
T
A
= 25 °C 37
b, c
T
A
= 70 °C 30
b, c
Pulsed drain current (t = 100 μs) I
DM
100
Continuous source-drain diode current
T
C
= 25 °C
I
S
23
g
T
A
= 25 °C 4.2
b, c
Single pulse avalanche current
L = 0.1 mH
I
AS
30
Single pulse avalanche energy E
AS
45 mJ
Maximum power dissipation
T
C
= 25 °C
P
D
27.8
W
T
C
= 70 °C 17.8
T
A
= 25 °C 5
b, c
T
A
= 70 °C 3.2
b, c
Operating junction and storage temperature range T
J
, T
stg
-55 to +150
°C
Soldering recommendations (peak temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
Maximum junction-to-ambient
b, f
t 10 s R
thJA
20 25
°C/W
Maximum junction-to-case (drain) Steady state R
thJC
3.4 4.5