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CAT28C16AWI-20T

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 6
1 Publication Order Number:
CAT28C16A/D
CAT28C16A
16 kb CMOS Parallel
EEPROM
Description
The CAT28C16A is a fast, low power, 5V−only CMOS Parallel
EEPROM organized as 2K x 8−bits. It requires a simple interface for
in−system programming. On−chip address and data latches,
self−timed write cycle with auto−clear and V
CC
power up/down write
protection eliminate additional timing and protection hardware. DATA
Polling signals the start and end of the self−timed write cycle.
Additionally, the CAT28C16A features hardware write protection.
The CAT28C16A is manufactured using ON Semiconductor’s
advanced CMOS floating gate technology. It is designed to endure
100,000 program/erase cycles and has a data retention of 100 years.
The device is available in JEDEC approved 24−pin DIP and SOIC or
32−pin PLCC packages.
Features
• Fast Read Access Times: 90 ns, 120 ns, 200 ns
• Low Power CMOS Dissipation:
– Active: 25 mA Max.
– Standby: 100 mA Max.
• Simple Write Operation:
– On−chip Address and Data Latches
– Self−timed Write Cycle with Auto−clear
• Fast Write Cycle Time: 10 ms Max
• End of Write Detection: DATA Polling
• Hardware Write Protection
• CMOS and TTL Compatible I/O
• 100,000 Program/Erase Cycles
• 100 Year Data Retention
• Commercial, Industrial and Automotive Temperature Ranges
PIN CONFIGURATION
TOP VIEW
PLCC Package (N, G)
DIP Package (L)
SOIC Package (J, K, W, X)
5
4
7
6
3
2
1
10
9
12
11
8
20
21
18
19
22
23
24
15
16
13
14
17
V
CC
A
8
A
9
WE
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
V
SS
5
7
6
10
9
12
11
8
13
14 15 16 17 18 19 20
4 3 2 1 32 31 30
29
27
28
24
25
22
23
26
21
A
8
A
9
NC
NC
OE
A
10
CE
I/O
7
I/O
6
A
7
NC
NC
NC
V
CC
WE
NC
A
6
A
5
A
4
A
3
A
2
A
1
A
0
NC
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
V
SS
NC
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
PDIP−24
L SUFFIX
CASE 646AD
PLCC−32
N, G SUFFIX
CASE 776AK
Address InputsA
0
−A
10
Data Inputs/OutputsI/O
0
−I/O
7
Chip EnableCE
Output EnableOE
Write EnableWE
5 V SupplyV
CC
FunctionPin Name
PIN FUNCTION
SOIC−24
J, K, W, X SUFFIX
CASE 751BK
GroundV
SS
No ConnectNC
CAT28C16A
http://onsemi.com
2
Figure 1. Block Diagram
ADDR. BUFFER
& LATCHES
ADDR. BUFFER
& LATCHES
INADVERTENT
CONTROL
LOGIC
TIMER
HIGH VOLTAGE
GENERATOR
I/O BUFFERS
2,048 x 8
EEPROM
ARRAY
CE
OE
WE
V
CC
A
0
−A
3
A
4
−A
10
WRITE
PROTECTION
COLUMN
DECODER
ROW
DECODER
DATA
POLLING
I/O
0
−I/O
7
Table 1. MODE SELECTION
Mode CE WE OE I/O Power
Read L H L D
OUT
ACTIVE
Byte Write (WE Controlled) L H D
IN
ACTIVE
Byte Write (CE Controlled) L H D
IN
ACTIVE
Standby, and Write Inhibit H X X High−Z STANDBY
Read and Write Inhibit X H H High−Z ACTIVE
Table 2. CAPACITANCE (T
A
= 25°C, f = 1.0 MHz, V
CC
= 5 V)
Symbol Test Max Conditions Units
C
I/O
(Note 1) Input/Output Capacitance 10 V
I/O
= 0 V pF
C
IN
(Note 1) Input Capacitance 6 V
IN
= 0 V pF
1. This parameter is tested initially and after a design or process change that affects the parameter.
Table 3. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Temperature Under Bias –55 to +125 °C
Storage Temperature –65 to +150 °C
Voltage on Any Pin with Respect to Ground (Note 2) –2.0 V to +V
CC
+ 2.0 V V
V
CC
with Respect to Ground −2.0 to +7.0 V
Package Power Dissipation Capability (T
A
= 25°C) 1.0 W
Lead Soldering Temperature (10 secs) 300 °C
Output Short Circuit Current (Note 3) 100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+ 0.5 V, which may overshoot to V
CC
+ 2.0 V for periods of less than 20 ns.
3. Output shorted for no more than one second. No more than one output shorted at a time.
CAT28C16A
http://onsemi.com
3
Table 4. RELIABILITY CHARACTERISTICS (Note 4)
Symbol Parameter Min Max Units
N
END
(Note 5) Endurance 100,000 Cycles/Byte
T
DR
(Notes 5) Data Retention 100 Years
V
ZAP
ESD Susceptibility 2,000 V
I
LTH
(Note 6) Latch−Up 100 mA
4. This parameter is tested initially and after a design or process change that affects the parameter.
5. For the CAT28C16A−20, the minimum endurance is 10,000 cycles and the minimum data retention is 10 years.
6. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
CC
+ 1 V.
Table 5. D.C. OPERATING CHARACTERISTICS (V
CC
= 5 V ±10%, unless otherwise specified.)
Symbol Parameter Test Conditions
Limits
Units
Min Typ Max
I
CC
V
CC
Current (Operating, TTL) CE = OE = V
IL
,
f = 1/t
RC
min, All I/O’s Open
35 mA
I
CCC
(Note 7) V
CC
Current (Operating, CMOS) CE = OE = V
ILC
,
f = 1/t
RC
min, All I/O’s Open
25 mA
I
SB
V
CC
Current (Standby, TTL) CE = V
IH
, All I/O’s Open 1 mA
I
SBC
(Note 8) V
CC
Current (Standby, CMOS) CE = V
IHC
, All I/O’s Open 100
mA
I
LI
Input Leakage Current V
IN
= GND to V
CC
−10 10
mA
I
LO
Output Leakage Current V
OUT
= GND to V
CC
,
CE = V
IH
−10 10
mA
V
IH
(Note 8) High Level Input Voltage 2 V
CC
+ 0.3 V
V
IL
(Note 7) Low Level Input Voltage −0.3 0.8 V
V
OH
High Level Output Voltage
I
OH
= −400 mA
2.4 V
V
OL
Low Level Output Voltage I
OL
= 2.1 mA 0.4 V
V
WI
Write Inhibit Voltage 3.0 V
7. V
ILC
= −0.3 V to +0.3 V
8. V
IHC
= V
CC
− 0.3 V to V
CC
+ 0.3 V
Table 6. A.C. CHARACTERISTICS, READ CYCLE (V
CC
= 5 V ±10%, unless otherwise specified.)
Symbol Parameter
28C16A−90 28C16A−12 28C16A−20
Units
Min Max Min Max Min Max
t
RC
Read Cycle Time 90 120 200 ns
t
CE
CE Access Time 90 120 200 ns
t
AA
Address Access Time 90 120 200 ns
t
OE
OE Access Time 50 60 80 ns
t
LZ
(Note 9) CE Low to Active Output 0 0 0 ns
t
OLZ
(Note 9) OE Low to Active Output 0 0 0 ns
t
HZ
(Notes 9, 10) CE High to High−Z Output 50 50 55 ns
t
OHZ
(Notes 9,
10)
OE High to High−Z Output 50 50 55 ns
t
OH
(Note 9) Output Hold from Address Change 0 0 0 ns
9. This parameter is tested initially and after a design or process change that affects the parameter.
10.Output floating (High−Z) is defined as the state when the external data line is no longer driven by the output buffer.
P1-P3P4-P6P7-P9P10-P10

CAT28C16AWI-20T

Mfr. #:
Buy CAT28C16AWI-20T
Manufacturer:
ON Semiconductor
Description:
EEPROM 16K-Bit CMOS PARA EEPROM
Lifecycle:
New from this manufacturer.
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