2N1613L

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
T4-LDS-0200 Rev. 1 (110597) Page 1 of 4
DEVICES LEVELS
2N718A 2N1613 JAN
2N1613L JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Unit
Collector-Emitter Voltage V
CEO
30 Vdc
Collector-Base Voltage V
CBO
75 Vdc
Emitter-Base Voltage V
EBO
7.0 Vdc
Collector Current I
C
500 mAdc
Total Power Dissipation
@ T
A
= +25°C
2N718A
2N1613, L
P
T
0.5
0.8
W
Total Power Dissipation
@ T
C
= +25°C
2N718A
2N1613, L
P
T
1.8
3.0
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
Thermal Resistance, Junction-to-Case
2N718A
2N1613, L
R
θJC
97
58
°C/W
(1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for T
A
> +25°C
(2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100µAdc
V
(BR)CEO
30 Vdc
Collector-Emitter Breakdown Voltage
I
C
= 100µAdc, R
BE
= 10
V
(BR)CER
50 Vdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 75Vdc
I
CBO
10
10
ηAdc
µAdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 7.0Vdc
I
EBO
10
10
ηA dc
µAdc
TO-18 (TO-206AA)
2N718A
TO-39 (TO-205AD)
2N1613
TO-5
2N1613L
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0200 Rev. 1 (110597) Page 2 of 4
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
h
FE
I
C
= 0.1mAdc, V
CE
= 10Vdc
I
C
= 10mAdc, V
CE
= 10Vdc
I
C
= 150mAdc, V
CE
= 10Vdc
I
C
= 500mAdc, V
CE
= 10Vdc
20
35
40
20
120
Collector-Emitter Saturation Voltage
V
CE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc
1.5
Base-Emitter Saturation Voltage
V
BE(sat)
Vdc
I
C
= 150mAdc, I
B
= 15mAdc
1.3
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Magnitude of Small-Signal Forward Current Transfer Ratio
|h
fe
|
I
C
= 50mAdc, V
CE
= 10Vdc, f = 20MHz 3.0
Small-Signal Forward Current Transfer Ratio
h
fe
I
C
= 1.0mAdc, V
CE
= 5Vdc, f = 1.0kHz
I
C
= 5.0mAdc, V
CE
= 10Vdc, f = 1.0kHz
30
35
100
150
Small-Signal Short Circuit Input Impedance
I
C
= 5.0mAdc, V
CB
= 10Vdc, f = 1.0kHz
h
ib
4.0 8.0
Small-Signal Short Circuit Output Admittance
I
C
= 5.0mAdc, V
CB
= 10Vdc, f = 1.0kHz
h
ob
1.0
η
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100 kHz f 1.0MHz
C
obo
25
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time & Turn-Off Time
(See Figure 5 of MIL-PRF-19500/181)
t
on
+ t
off
30
ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0200 Rev. 1 (110597) Page 3 of 4
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall not exceed .010
inch (0.254 mm).
4. (Three leads) LU applies between L1 and L2. LD applies between L2 and .5 inch (12.70 mm) from seating plane.
Diameter is uncontrolled in L1 and beyond .5 inch (12.70 mm) from seating plane.
5. Measured from maximum diameter of the actual device.
6. Details of outline in this zone optional.
7. The collector shall be electrically connected to the case.
8. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.
9. All three leads.
10. In accordance with ANSI Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 1. Physical dimensions 2N718A (TO-18).
Dimensions
Symbol Inches Millimeters Notes
Min Max Min Max
CD .178 .195 4.52 4.95
CH .170 .210 4.32 5.33
HD .209 .230 5.31 5.84
LC .100 TP 2.54 TP 5
LD .016 .021 0.41 0.53 8, 9
LL .500 .750 12.70 19.05 7, 9
LU .016 .019 0.41 0.48 4, 8, 9
L
1
.050 1.27 9
L
2
.250 6.35 9
TL .028 .048 0.71 1.22 5
TW .036 .046 .91 1.17
P .100 2.54 3
Q
.030 0.76 6
R .010 .025
α 45° TP 45° TP

2N1613L

Mfr. #:
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
Lifecycle:
New from this manufacturer.
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