TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
T4-LDS-0200 Rev. 1 (110597) Page 1 of 4
DEVICES LEVELS
2N718A 2N1613 JAN
2N1613L JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions Symbol Min. Unit
Collector-Emitter Voltage V
CEO
30 Vdc
Collector-Base Voltage V
CBO
75 Vdc
Emitter-Base Voltage V
EBO
7.0 Vdc
Collector Current I
C
500 mAdc
Total Power Dissipation
@ T
A
= +25°C
2N718A
2N1613, L
P
T
0.5
0.8
W
Total Power Dissipation
@ T
C
= +25°C
2N718A
2N1613, L
P
T
1.8
3.0
W
Operating & Storage Junction Temperature Range T
J
, T
stg
-65 to +200 °C
Thermal Resistance, Junction-to-Case
2N718A
2N1613, L
R
θJC
97
58
°C/W
(1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for T
A
> +25°C
(2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for T
C
> +25°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100µAdc
V
(BR)CEO
30 Vdc
Collector-Emitter Breakdown Voltage
I
C
= 100µAdc, R
BE
= 10Ω
V
(BR)CER
50 Vdc
Collector-Base Cutoff Current
V
CB
= 60Vdc
V
CB
= 75Vdc
I
CBO
10
10
ηAdc
µAdc
Emitter-Base Cutoff Current
V
EB
= 5.0Vdc
V
EB
= 7.0Vdc
I
EBO
10
10
ηA dc
µAdc
TO-18 (TO-206AA)
2N718A
TO-39 (TO-205AD)
2N1613
TO-5
2N1613L