Characteristics STPS16170C
4/12 DocID12540 Rev 4
Figure 9. Thermal resistance junction to ambient versus copper surface under tab (D²PAK)
Figure 5. Reverse leakage current versus
reverse voltage applied (typical values,
per diode)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values, per diode)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
0 25 50 75 100 125 150 175
I
R
(µA)
T
j
=150°C
T
j
=125°C
T
j
=25°C
T
j
=75°C
T
j
=175°C
V
R
(V)
10
100
1000
1 10 100 1000
C(pF)
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
V
R
(V)
Figure 7. Forward voltage drop vs. forward
current (per diode)
Figure 8. Thermal resistance junction to
ambient versus copper surface under tab
(DPAK)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
I
FM
(A)
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
V
FM
(V)
5
WKMD
&:
6
&8
FPð
'3$.
(SR[\SULQWHGERDUG)5FRSSHUWKLFNQHVV
P
5WKMD&:
(SR[\SULQWHGERDUG)5H
&X
P
6
FX
FPð
'ð3$.
