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VLIN1626-02GHE3-18

P1-P3P4-P6
VLIN1626-02G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Feb-16
1
Document Number: 85902
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low Capacitance, Single-Line ESD-Protection Diode in SOD-323
MARKING (example only)
XYZ = type code (see table below)
bar = pin 1
FEATURES
• For LIN-Bus applications
• Small SOD-323 package
• Working range: -16 V; +26.5 V
• Low leakage current I
R
< 0.05 μA
• Low load capacitance C
D
< 18 pF
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
• e3 - pins plated with tin (Sn)
• 1-line ESD-protection
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
SOD-323
22756
20503
1
2
XYZ
1
ORDERING INFORMATION
PART
NUMBER
(EXAMPLE)
ENVIRONMENTAL AND QUALITY CODE PACKAGING CODE
ORDERING CODE
(EXAMPLE)
AEC-Q101
QUALIFIED
R
o
HS-COMPLIANT + LEAD
(P
b
)-FREE TERMINATIONS
TIN
PLATED
3K PER 7" REEL
(8 mm TAPE)
15K/BOX = MOQ
10K PER 13" REEL
(8 mm TAPE)
10K/BOX = MOQ
STANDARD GREEN
VLIN1626-02G
-
E
-
3-08
-
VLIN1626-02G-E3-08
VLIN1626-02G H E
-
3-08
-
VLIN1626-02GHE3-08
VLIN1626-02G
-
E
-
3
-
-18 VLIN1626-02G-E3-18
VLIN1626-02G H E
-
3
-
-18 VLIN1626-02GHE3-18
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VLIN1626-02G
SOD-323 6A1 4.30 mg UL 94 V-0
MSL level 1
(according J-STD-020)
Peak temperature
max. 260 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
Pin 1 to pin 2; T
A
= 25 °C, acc. IEC 61000-4-5; t
p
= 8/20 μs; single
I
PPM
6
A
Pin 2 to pin 1; T
A
= 25 °C, acc. IEC 61000-4-5; t
p
= 8/20 μs; single
4
Peak pulse power T
A
= 25 °C, acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot P
PP
200 W
ESD immunity
Contact discharge acc. IEC 61000-4-2; 10 pulses, T
A
= 25 °C
V
ESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses, T
A
= 25 °C ± 30
Operating temperature Junction temperature T
J
-55 to +150
°C
Storage temperature T
STG
-55 to +150
VLIN1626-02G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Feb-16
2
Document Number: 85902
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 / 150 pF)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
--1lines
Reverse stand-off voltage
Pin 1 to pin 2; max. reverse working voltage
V
RWM
--16
V
Pin 2 to pin 1; max. reverse working voltage - - 26.5
Reverse voltage
Pin 1 to pin 2; at I
R
= 0.05 μA
V
R
16 - -
V
Pin 2 to pin 1; at I
R
= 0.05 μA 26.5 - -
Reverse current
Pin 1 to pin 2; at V
RWM
= 16 V
I
R
--0.05
μA
Pin 2 to pin 1; at V
RWM
= 26.5 V - - 0.05
Reverse breakdown voltage
Pin 1 to pin 2; at I
R
= 1 mA
V
BR
17.1 18.7 20.3
V
Pin 2 to pin 1; at I
R
= 1 mA 28 30 32
Reverse clamping voltage
Pin 1 to pin 2; at I
PP
= 1 A; t
p
= 8/20 μs
V
C
-2225
V
Pin 1 to pin 2; at I
PP
= 6 A; t
p
= 8/20 μs - 29 33
Pin 2 to pin 1; at I
PP
= 1 A; t
p
= 8/20 μs - 32 40
Pin 2 to pin 1; at I
PP
= 4 A; t
p
= 8/20 μs - 39 50
Capacitance At V
R
= 0 V, f = 1 MHz C
D
- 15.5 18 pF
10
100
1000
10000
0
20
40
60
80
100
120
-10 0 10 20 30 40 50 60 70 80 90 100
Axis Title
1st line
2nd line
2nd line
I
ESD
(%)
t (ns)
2nd line
Rise time = 0.7 ns to 1 ns
53
27
20557
10
100
1000
10000
0
20
40
60
80
100
010203040
Axis Title
1st line
2nd line
2nd line
I
PPM
(%)
t (µs)
2nd line
20 µs to 50 %
8 µs to 100 %
20548
V
R
(V)
C
D
(pF)
22767
0
2
4
6
8
10
12
14
16
18
-20 -10 0 10 20 30
f = 1 MHz
Pin 2 -1
10
100
1000
10000
0
5
10
15
20
25
30
35
0.01 0.1 1 10 100 1000 10 000
Axis Title
1st line
2nd line
2nd line
V
R
(V)
I
R
(µA)
2nd line
T
J
= 150 °C
75 °C
25 °C
-40 °C
100 °C
Pin 2-1
22811
VLIN1626-02G
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Feb-16
3
Document Number: 85902
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Fig. 6 - Typical Peak Clamping Voltage V
C
vs.
Peak Pulse Current I
PP
Fig. 7 - Typical Clamping Voltage V
C-TLP
vs. Pulse Current I
TLP
22812
0
5
10
15
20
25
0.01 0.1 1 10 100 1000 10 000
2nd line
V
R
(V)
I
R
(µA)
2nd line
T
J
= 150 °C
75 °C
25 °C
-40 °C
100 °C
Pin 1-2
0
5
10
15
20
25
30
35
40
45
01234567
2nd line
V
C
(V)
I
PP
(A)
2nd line
Measured according IEC 61000-4-5
(8/20 µs - wave form)
Pin 1-2
Pin 2-1
22813
I
TLP
(A)
V
C-TLP
(V)
22770
0
10
20
30
40
50
60
0 102030405060
Transmission Line Pulse
TLP: t
p
= 100 ns
Pin 2-1
Pin 1- 2
P1-P3P4-P6

VLIN1626-02GHE3-18

Mfr. #:
Buy VLIN1626-02GHE3-18
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors Low Cap Sgle ESD AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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