IXFK32N90P Datasheet IXFX32N90P, IXFK32N90P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 900 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 900 V

V

GSS

Continuous ±30 V

V

GSM

Transient ±40 V

I

D25

T

C

= 25°C32 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

80 A

I

A

T

C

= 25°C16 A

E

AS

T

C

= 25°C 2 J

dv/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 15 V/ns

P

D

T

C

= 25°C 960 W

T

J

-55 to +150 °C

T

JM

150 °C

T

stg

-55 to +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-264) 1.13/10 Nm/lb.in.

F

C

Mounting Force (PLUS247) 20..120 /4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

IXFK32N90P

IXFX32N90P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

V

DSS

= 900V

I

D25

= 32A

R

DS(on)

< 300m

ΩΩ

Ω

DS100387(9/11)

Advance Technical Information

G = Gate D = Drain

S = Source Tab = Drain

PLUS247 (IXFX)

Tab

G

D

S

TO-264 (IXFK)

S

G

D

Tab

Polar

TM

HiPerFET

TM

Power MOSFETs

Features

z

Low R

DS(on)

and Q

G

z

Avalanche Rated

z

Low Package Inductance

z

Fast Intrinsic Rectifier

Advantages

z

High Power Density

z

Easy to Mount

z

Space Savings

Applications

z

Switch-Mode and Resonant-Mode

Power Supplies

z

DC-DC Converters

z

Laser Drivers

z

AC and DC Motor Drives

z

Robotics and Servo Controls

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 900 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.5 6.5 V

I

GSS

V

GS

= ±30V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

,

V

GS

= 0V 25 μA

T

J

= 125°C 2 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 300 mΩ

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFK32N90P

IXFX32N90P

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 13 22 S

C

iss

10.6 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 750 pF

C

rss

140 pF

R

Gi

Gate Input Resistance 1.1 Ω

t

d(on)

48 ns

t

r

80 ns

t

d(off)

68 ns

t

f

26 ns

Q

g(on)

215 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

80 nC

Q

gd

98 nC

R

thJC

0.13 °C/W

R

thCS

0.15 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 32 A

I

SM

Repetitive, Pulse Width Limited by T

JM

128 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

Q

RM

1.9 μC

I

RM

14

A

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 1Ω (External)

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-264 Outline

PLUS247

TM

Outline

Terminals: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Terminals: 1 - Gate

2 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A

1

2.29 2.54 .090 .100

A

2

1.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b

2

2.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

I

F

= 16A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

IXFK32N90P

IXFX32N90P

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

4

8

12

16

20

24

28

32

012345678

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8

V

7

V

6

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

0 5 10 15 20 25 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

6

V

7

V

8

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

4

8

12

16

20

24

28

32

0 2 4 6 8 1012141618

V

DS

- Volts

I

D

- Amperes

6

V

5V

V

GS

= 10V

8V

7

V

Fig. 4. R

DS(on)

Normalized to I

D

= 16A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50-250 255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 32A

I

D

= 16A

Fig. 5. R

DS(on)

Normalized to I

D

= 16A Value vs.

Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

0 10203040506070

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

5

10

15

20

25

30

35

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFK32N90P

IXFK32N90P

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