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BZT52B4V7 RHG

P1-P3P4-P5
BZT52B2V4 - BZT52B75
- Pb free and RoHS compliant
- V
Z
Tolerance Selection of ±2%
- Matte tin (Sn) lead finish with Nickel (Ni) under plate
- Halogen-free according to IEC 61249-2-21
- Case: Flat lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- Polarity: Indicated by cathode band
- Weight : 8.85 ± 0.5mg
V
F
V
P
D
mW
R
θJA
°C/W
T
J
°C
T
STG
°C
V
BR
I
ZK
: Test current for voltage V
BR
Z
ZK
: Dynamic impedance at I
ZK
I
ZT
: Test current for voltage V
Z
V
Z
Z
ZT
: Dynamic impedance at I
ZT
I
ZM
: Maximum steady state current
V
ZM
Document Number: DS_S1405026 Version: F15
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
FEATURES
Junction temperature
350
Forward voltage @ I
F
= 10mA
SYMBOL
- Moisture sensitivity level 1
500mW, 2% Tolerance SMD Zener Diode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
MECHANICAL DATA
- High temperature soldering guaranteed: 260°C/10s
- Surface mount device type
: Voltage at I
ZK
Taiwan Semiconductor
SOD-123F
Small Signal Product
- Wide zener voltage range selection : 2.4V to 75V
- 65 to +150
VALUE UNIT
Power dissipation
Thermal resistance from junction to ambient (Note 1)
: Voltage at current I
ZT
ZENER I vs. V CHARACTERISTICS
1
500
: Voltage at I
ZM
Storage temperature
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
150
ELECTRICAL CHARACTERISTICS
(Ratings at T
A
=25°C ambient temperature unless otherwise specified,
and V
F
Forward Voltage = 1V Maximum @ I
F
= 10 mA for all part numbers)
I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
V
R
Min (V) Nom (V) Max (V) mA mA μAV
BZT52B2V4 2V4B 2.35 2.40 2.45 5 100 564 1 45 1
BZT52B2V7 2V7B 2.65 2.70 2.75 5 100 564 1 18 1
BZT52B3V0 3V0B 2.94 3.00 3.06 5 100 564 1 9 1
BZT52B3V3 3V3B 3.23 3.30 3.37 5 95 564 1 4.5 1
BZT52B3V6 3V6B 3.53 3.60 3.67 5 90 564 1 4.5 1
BZT52B3V9 3V9B 3.82 3.90 3.98 5 90 564 1 2.7 1
BZT52B4V3 4V3B 4.21 4.30 4.39 5 90 564 1 2.7 1
BZT52B4V7 4V7B 4.61 4.70 4.79 5 80 470 1 2.7 2.0
BZT52B5V1 5V1B 5.00 5.10 5.20 5 60 451 1 1.8 2.0
BZT52B5V6 5V6B 5.49 5.60 5.71 5 40 376 1 0.9 2.0
BZT52B6V2 6V2B 6.08 6.20 6.32 5 10 141 1 2.7 4.0
BZT52B6V8 6V8B 6.66 6.80 6.94 5 15 75 1 1.8 4.0
BZT52B7V5 7V5B 7.35 7.50 7.65 5 15 75 1 0.9 5.0
BZT52B8V2 8V2B 8.04 8.20 8.36 5 15 75 1 0.63 5.0
BZT52B9V1 9V1B 8.92 9.10 9.28 5 15 94 1 0.45 6.0
BZT52B10 10VB 9.80 10.00 10.20 5 20 141 1 0.18 7.0
BZT52B11 11VB 10.78 11.00 11.22 5 20 141 1 0.09 8.0
BZT52B12 12VB 11.76 12.00 12.24 5 25 141 1 0.09 8.0
BZT52B13 13VB 12.74 13.00 13.26 5 30 160 1 0.09 8.0
BZT52B15 15VB 14.70 15.00 15.30 5 30 188 1 0.045 10.5
BZT52B16 16VB 15.68 16.00 16.32 5 40 188 1 0.045 11.2
BZT52B18 18VB 17.64 18.00 18.36 5 45 212 1 0.045 12.6
BZT52B20 20VB 19.60 20.00 20.40 5 55 212 1 0.045 14.0
BZT52B22 22VB 21.56 22.00 22.44 5 55 235 1 0.045 15.4
BZT52B24 24VB 23.52 24.00 24.48 5 70 235 1 0.045 16.8
BZT52B27 27VB 26.46 27.00 27.54 2 80 282 0.5 0.045 18.9
BZT52B30 30VB 29.40 30.00 30.60 2 80 282 0.5 0.045 21.0
BZT52B33 33VB 32.34 33.00 33.66 2 80 306 0.5 0.045 23.0
BZT52B36 36VB 35.28 36.00 36.72 2 90 329 0.5 0.045 25.2
BZT52B39 39VB 38.22 39.00 39.78 2 130 329 0.5 0.045 27.3
BZT52B43 43VB 42.14 43.00 43.86 2 150 353 0.5 0.045 30.1
BZT52B47 47VB 46.06 47.00 47.94 2 170 353 0.5 0.045 33.0
BZT52B51 51VB 49.98 51.00 52.02 2 180 376 0.5 0.045 35.7
BZT52B56 56VB 54.88 56.00 57.12 2 200 400 0.5 0.045 39.2
BZT52B62 62VB 60.76 62.00 63.24 2 215 423 0.5 0.045 43.4
BZT52B68 68VB 66.64 68.00 69.36 2 240 447 0.5 0.045 47.6
BZT52B75 75VB 73.50 75.00 76.50 2 255 470 0.5 0.045 52.5
Notes： 1. The Zener Voltage (V
Z
) is tested under pulse condition of 10ms.
2. The device numbers listed have a standard tolerance on the normal zener voltage of ±2%.
3. For detailed information on price, availability and delivery of normal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The Zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the dc zener current is superimposed to I
ZT
or I
ZK
.
Document Number: DS_S1405026 Version: F15
BZT52B2V4 - BZT52B75
Taiwan Semiconductor
Device
type
Marking
code
Zener voltage range Maximum zener impedance
Ohm
Small Signal Product
Maximum reverse
current
V
Z
@ I
ZT
Document Number: DS_S1405026
Version: F15
(T
A
=25°C unless otherwise noted)
BZT52B2V4 - BZT52B75
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
0.01
0.1
1
10
100
0123456789101112
Zener Current (mA)
Zener Voltage (V)
Fig. 2 Zener Breakdown Characteristics
0.01
0.1
1
10
100
15 25 35 45 55 65 75 85
Zener Current (mA)
Zener Voltage (V)
Fig. 3 Zener Breakdown Characteristics
1
10
100
1000
1 10 100
Capacitance (pF)
Zener Voltage (V)
Fig. 5 Typical Capacitance
0
100
200
300
400
500
0 50 100 150 200
Power Dissipation (mW)
Ambient Temperature (
o
C)
Fig. 4 Admissible Power Dissipation Curve
1
10
100
1000
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Forward Current (mA)
Forward Voltage (V)
Fig. 1 Typical Forward Characteristics
1
10
100
1000
1 10 100
Dynamic Impedence(Ohm)
Zener Voltage (V)
Fig. 6 Effect of Zener Voltage on Impedence
I
Z
=5mA
I
Z
=20mA
P1-P3P4-P5

BZT52B4V7 RHG

Mfr. #:
Buy BZT52B4V7 RHG
Manufacturer:
Taiwan Semiconductor
Description:
Zener Diodes Zener 410mW 2% 4V7
Lifecycle:
New from this manufacturer.
Delivery:
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